RF and Analog/Mixed-Signal Technologies

commonkissingcanRéseaux et Communications

17 févr. 2014 (il y a 3 années et 4 mois)

182 vue(s)

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RF and Analog/Mixed
-
Signal Technologies


Herbert S.
Bennett

h
erbert.bennett@nist.gov

Acting Chairman for ITRS RF and A/MS WG

National Institute of Standards and Technology

Gaithersburg, Maryland, USA 20899

5 December 2012 ITRS Winter Public Meeting

Hsinchu
, Taiwan


Presented by Michael
Gaitan
, NIST,

Chairman for ITRS MEMS WG

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RF&A/MS Winter 2012

Chapter overview

Membership

Application drivers

Technologies


CMOS, Bipolar, III
-
V, HVMOS, Passives

Outlook

Work in progress


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RF&A/MS Chapter

Analog
-

carrier Frequency bands

LF Analog (0
-

0.4 GHz)

RF (0.4


30 GHz)

mm
-
wave (30


300 GHz)

THz (> 300 GHz)

Example applications

Automotive controls

Cellular

60 GHz point
-
to
-
point

No products yet

On
-
chip regulators

WLAN

Imaging

Power management

SerDes

Automotive radar

ADC, DAC

Wireless backhaul


Chapter organization is aligned by device technologies

-
Such as CMOS, Si Bipolar, III
-
V, and
Passives

-
Applications for devices determines the technology requirements and
Figures of Merit (
FoMs
).


Broadened scope in 2012 to include analog applications the 2013 edition

-
Described in Mixed
-
Signal section of System Drivers chapter


May revise the scope for 2013 to include higher voltages, heterogeneous
integration, and ultra
-
lower power for medical devices and to remove HVMOS.


Close cross
-
TWG interactions and alignments with
A&P,
Design/
SysDrivers
,
ERD,
Interconnect, MEMs (especially, RF MEMS), and PIDS

Work in progress


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RF and A/MS Membership

Analog Devices

Ali
Eshraghi

David Robertson

Craig Wilson

Susan
Feindt

Freescale

Jay John

Fujitsu

Toshiro
Futatsugi

Hitachi Ltd.

Digh

Hisamoto


HRL

James Li


IBM

Mattias

Dahlstrom
(CMOS)

Kathleen
Kingscott

Jack
Pekarik

Dawn Wang

IEEE

Anthony
Immorlica

Jr.

ITRS

Linda Wilson

Jazz Semiconductor

Edward
Preisler


National Semiconductor

Wibo

Van
Noort


NIST

Herbert Bennett (Acting
Chair)

Michael Gaitan (MEMS
Chair)

NXP

Peter Magnèe

PMC
-
Sierra

Hormoz Djahanshahi

Raytheon

Tom Kazior (III
-
V)

Sony

Kaneyoshi Takeshita

ST

Pascal Chevalier(Bipolar)

TI

Kamel

Benaissa


TU Dresden/UCSD

Michael
Schroter

Univ. of Michigan

Mina
Rais
-
Zedah

(Passives)

Univ. of Toronto

Sorin

Voinigescu


24 Active members for 2013


(38 Active members for 2012)

18 N. America, 3 Europe, 3 Asia

Seeking a new Chair for the TWG

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System Drivers

Circuit
-
level
FoMs

related to device technology
FoMs

-
Low
-
noise amplifier (LNA)

-
Voltage
-
controlled oscillator (VCO)

-
Power amplifier (PA)

-
Analog
-
to
-
digital converter (ADC)

-
Serializer
-
Deserializer

(
SerDes
)

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CMOS TRENDS


The TWG adopted a similar methodology that PIDS developed and
used in 2012 to develop the roadmap: use of TCAD
-
based models to
predict
FoMs

at the device level.


Need to account for realistic layout & resulting parasitic impedances


Lower Power Requirements


in mobile RF for Internet of Things



Integration density


very large number of digital gates integrated on
the same die as large number of surrounding periphery analog I/
Os
,
supports complex processing functions (e.g., network processing,
routing and protocol mapping data
-
communication applications)


High
-
speed
SerDes

Transceivers


serial data rates going up from
10
-
14 Gb/s to 20
-
28 Gb/s and 40
-
50 Gb/s. A mix of analog and DSP
takes advantage of high
-
speed, densely
-
integrated digital to perform
DSP functions, e.g. digital equalization, filtering & adaptation in RX.
Hybrid analog/digital or all
-
digital PLLs/DLLs making their way in TX
clock
-
multiplier unit (CMU) and RX clock
-
and
-
data
-
recovery (CDR).



Work in progress


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Bipolar

2013
: Major changes expected in the Bipolar Roadmap

1.
High
-
Speed
Bipolar Device
FoMs


Use simulation
-
based roadmap (TCAD + Compact modeling) to predict device
FoMs



Assessment of the impact of Back End of Line (BEOL)
parasitics

(packaging,
interconnects,
etc
) will be included in
the TCAD + Compact modeling



7

Work in progress


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III
-
V technologies


Analog, Microwave, mm
-
wave applications with e
mphasis on mm
-
wave


Production dates of scaled
InP

HEMT,
InP

HBT and
GaN

HEMT shifted
one year sooner (release date driven by

pull


for technology)


Technology roadmaps truncated at expected end of scaling


GaAs

PHEMT(2015),
GaAs

Power MHEMT(2019),
InP

Power HEMT(2023),


Low Noise
GaAs

MHEMT and
InP

HEMT,
InP

HBT and
GaN

HEMT expected
to continue scaling


May split
GaN

technology requirements into those for different market
applications (power electronics, RF, and sub
-
mm
-
wave) and
InP

mHEMT

into their respective market applications.



For FETs, currently D
-
mode only, plan to add E
-
mode device in 2013
revision


FoMs

depend on technology and application [ (
f
T
,
f
MAX
,
g
m
, V
BD
), (Power, gain,
efficiency @ 10, 24, 60, 94, 140, 220 GHz), (NF
MIN
, G
A

@ 10, 24, 60, 94 GHz), and


(LNA NF, G
A

@ 140, 220 GHz)

Work in progress


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High Voltage MOS and Passive Devices


For 2013


TWG is recruiting new members to develop technology
requirement tables
for High Voltage MOS and Passive
Devices.

Work in progress


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Outlook & future considerations


New opportunities for discussions with the MEMS TWG for medical
applications and the ERD TWG for emerging device technologies.


Imaging is not currently in the roadmap. The TWG would like to
expand the roadmap into THz applications for imaging.


The TWG would like to evaluate Automotive Radar applications to
determine if they are ready for
roadmapping
.


The TWG is developing a survey to understand how to increase the
relevance of its
roadmapping

efforts; especially for organizations
developing
MtM

device technologies (e.g.
Tricorder

X prize



healthcare in the palm of your hand.
”)