Interface-induced lateral anisotropy of semiconductor heterostructures

woundcallousSemiconductor

Nov 1, 2013 (4 years and 2 months ago)

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Interface
-
induced lateral
anisotropy of semiconductor
heterostructures

M.O. Nestoklon,

Ioffe Physico
-
Technical Institute, St. Petersburg, Russia

JASS 2004


Contents


Introduction


Zincblende semiconductors


Interface
-
induced effects


Lateral optical anisotropy: Experimental


Tight
-
binding method


Basics


Optical properties in the tight
-
binding method


Results of calculations


Conclusion

Motivation

The light, emitted in the (001) growth

direction was found to be linearly polarized


This can not be explained by using the T
d

symmetry of

bulk compositional semiconductor

P
lin

(001)

Zincblende semiconductors

T
d

symmetry determines bulk semiconductor
bandstructure

However, we are interested in
heterostructure properties.

An (001)
-
interface has the lower symmetry

Zincblende semiconductors

The point symmetry of a single (001)
-
grown

interface is C
2v

C

A

C


A


Envelope function approach

Electrons and holes with the effective mass

The Kane model takes into account complex band structure of the valence band

and the wave function becomes a multi
-
component column.

The Hamiltonian is rather complicated…

Zincblende semiconductor
bandstructure

Rotational symmetry

C
n
has n spinor representations

C
2v

contains the second
-
order rotational axis C
2

and
does not

distinguish

spins differing by 2

For the C
2v

symmetry, states with the spin +1/2 and
-
3/2 are coupled in the Hamiltonian.

If we have the rotational axis C

, we can define the angular momentum component

l

as a quantum number


l

= 0,
±
1,
±
2,
±
3, …


l

=
±
1/2,
±
3/2, …

The angular momentum can unambiguously be defined only for


l

= 0,
±
1,
±
2,
±
3, …


l

=
±
1/2,
±
3/2, …

-
n/2
<

l




n/2

Crystal symmetry

As a result of the translational symmetry, the state of an electron in a crystal is

characterized by the value of the wave vector
k
and, in accordance with the Bloch

theorem,

In the absence of translational symmetry the classification by
k

has no sense.

Let us remind that
k

is defined in the first Brillouin zone. We can add any vector

from reciprocal lattice.

Examples


-
X coupling occurs due to translational symmetry breakdown


J. J. Finley

et al, Phys. Rev. B,
58
,
10 619
, (1998)


Schematic representation of the band

structure of the p
-
i
-
n GaAs/AlAs/GaAs

tunnel diode. The conduction
-
band minima

at the


and X points of the Brillouin zone

are shown by the full and dashed lines,
respectively. The X point potential forms

a quantum well within the AlAs barrier,

with the

-
X transfer process then taking

place between the

-
symmetry 2D emitter
states and quasi
-
localized X states within
the AlAs barrier.

hh
-
lh mixing

E.L. Ivchenko, A. Yu. Kaminski, U. Roessler,

Phys. Rev. B
54
,
5852
, (1996)

Type
-
I and
-
II heterostrucrures

The main difference is that interband optical transition takes place only at the interface

in type
-
II heterostructure when, in type
-
I case, it occurs within the whole CA layer

Type I

Type II

Lateral anisotropy

type I

type II

P
lin

(001)

Optical anisotropy in ZnSe/BeTe

A.
V. Platonov, V. P. Kochereshko,

E. L. Ivchenko

et al., Phys. Rev. Lett.
83
, 3546 (1999)


Optical anisotropy in the InAs/AlSb

F. Fuchs
,

J. Schmitz and N. Herres,

Proc. the 23rd Internat. Conf. on Physics of Semiconductors
,

vol.

3
,

1803

(Berlin, 1
996
)

Situation is typical for type
-
II

heterostructures.

Here the anisotropy is ~ 60%

Tight
-
binding method: The main idea

C

C

A

C

A

A

Tight
-
binding Hamiltonian









Optical matrix element

The choice of the parameters

The choice of the parameters

In

?

As

?

Al

Sb

Al

?

?

In

As

In

As

?

?

In

As

V

Electron states in thin QWs

GaAs

(strained)

GaSb

GaSb

A.A. Toropov, O.G. Lyublinskaya, B.Ya. Meltser,

V.A. Solov’ev,

A.A. Sitnikova, M.O. Nestoklon, O.V. Rykhova,
S.V. Ivanov
, K. Thonke and R. Sauer,

Phys. Rev
B, submitted (2004)

Lateral optical anisotropy

Results of calculations

E.L. Ivchenko and M.O. Nestoklon, JETP
94
, 644

(
2002
);

arXiv
http://arxiv.org/abs/cond
-
mat/0403297

(submitted to
Phys. Rev.

B)

Conclusion


A tight
-
binding approach has been developed in order
to calculate the electronic and optical properties of
type
-
II heterostructures.


the theory allows a giant in
-
plane linear polarization
for the photoluminescence of type
-
II (001)
-
grown
multi
-
layered structures, such as InAs/AlSb and
ZnSe/BeTe.



Electron state in a thin QW

The main idea of the symmetry
analysis

If crystal lattice has the symmetry transformations

Then the Hamiltonian is invariant under these transformations:

where is point group representation

Time inversion symmetry

Basis functions


Для описания экспериментальных данных необходим


учёт спин
-
орбитального расщепления валентной зоны


для описания непрямозонных полупроводников

верхние орбитали


(
s*
)

~
20
-
зонная модель. 15 параметров

Hamiltonian matrix elements

Optical matrix elements