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Nov 21, 2013 (3 years and 4 months ago)

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RF and A/MS Technologies for Wireless Communications Working Group 2 April 2003
-

Work In Progress


Not for Publication

1

PIDS ITWG




RF and A/MS Technologies for Wireless Communications

Working Group




Scope of the New Group



WG Status & Organization



Working Strategy



Links to other TWGs

RF and A/MS Technologies for Wireless Communications Working Group 2 April 2003
-

Work In Progress


Not for Publication

2

PIDS RF and A/MS Technologies for Wireless Communications WG

Scope of the New Group


PIDS 2002:

(
P
rocess,

I
ntegration,
D
evices &
S
tructures)


Memory & Logic

Analog/Mixed
-
Signal Devices

Reliability

Emerging Research Devices

Addition of a new technology driver

based on

RF and A/MS Technologies for

Wireless Communications:

includes

-

PAs & Power Management

-

RF Transceivers

-

Analog & Mixed Signal

-

mm
-
Wave

RF and A/MS Technologies for Wireless Communications Working Group 2 April 2003
-

Work In Progress


Not for Publication

3

PIDS RF and A/MS Technologies for Wireless Communications WG

Scope of the New Group

From D. Barlas, et. al., Microw. Journal,
June 1999
, p. 22

Commercial applications & available spectrum are RF semiconductor technology drivers

What will be the future technology options?

RF and A/MS Technologies for Wireless Communications Working Group 2 April 2003
-

Work In Progress


Not for Publication

4

PIDS RF and A/MS Technologies for Wireless Communications WG

Scope of the New Group

AA
-

filter

ADC



AGC



LNA

digital

part

N



f

ref

VCO

DAC

PA

Circuit functions of a typical mobile communication system

RF and A/MS Technologies for Wireless Communications Working Group 2 April 2003
-

Work In Progress


Not for Publication

5

PIDS RF and A/MS Technologies for Wireless Communications WG

Focus on technologies serving wireless market

(Cell phones, WLAN, UWB commun., TV tuners, automotive radar, ..)


Include as potential solutions:


-

Technologies: Si CMOS, SiGe HBT, Si LDMOS, GaAs, InP, SiC, GaN

-

Device structures: MOSFET, MESFET, HEMT, HBT, LDMOS

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Other technologies (MEMS, BAW, Passives, ..)


Tasks for 2003:

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Recruit group members

-

Develop WG organization, schedule & meetings

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Develop technology requirement tables

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Develop potential solutions tables

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Develop text

-

Develop multi
-
year strategy

-

Introduce Compound Semiconductors into ITRS

Scope of the New Group

RF and A/MS Technologies for Wireless Communications Working Group 2 April 2003
-

Work In Progress


Not for Publication

6

PIDS RF and A/MS Technologies for Wireless Communications WG

WG is up
(16 members)


Chair:


Margaret Huang, Motorola


Co
-
Chairs:

Bin Zhao, Skyworks



Jan
-
Erik Mueller, Infineon


Editorial:

Herbert Bennet, NIST


Sub
-
Group (1):

PAs & Power Management



Julio Costa, RFMD (L)



Ding Day, Skyworks



Ali Hajimiri, Caltech



Dave Halchin, RFMD



Jan
-
Erik Mueller, Infineon



Sam Shichijo, Texas Instruments



Chuck Weitzel, Motorola


WG Status & Organization

RF and A/MS Technologies for Wireless Communications Working Group 2 April 2003
-

Work In Progress


Not for Publication

7

PIDS RF and A/MS Technologies for Wireless Communications WG

Sub
-
Group (2):

RF Transceivers



Marco Racanelli, Jazz (L)



Peter Cottrell, IBM



Ali Niknejad, UC Berkeley



Sam Shichijo, Texas Instruments


Sub
-
Group (3):

Analog & Mixed Signal



Ralf Brederlow, Infineon (L)



Margaret Huang, Motorola



Tony Immorlica, BAE Systems



Sam Shichijo, Texas Instruments



Bin Zhoa, Skyworks


Sub
-
Group (4):

Millimeter Wave



Tony Immorlica, BAE Systems (L)



Bill Stanchina, HRL



Ali Niknejad, UC Berkeley



Ali Hajimiri, Caltech

WG Status & Organization

RF and A/MS Technologies for Wireless Communications Working Group 2 April 2003
-

Work In Progress


Not for Publication

8

PIDS RF and A/MS Technologies for Wireless Communications WG



Each Sub
-
Group generates own table




Based on application spectrum divided in 3 bands


(1) 1
-

10 GHz (PA, RF Transc., A/MS)


(2) 11
-

30 GHz


(3) 31
-

100 GHz (mm
-
Wave)


( 11
-

30 GHz after completion of the other two bands)




Tables include candidate technologies


Si CMOS, SiGe HBT, Si LDMOS, GaAs, InP, SiC, GaN


and Device structures


MOSFET, MESFET, HEMT, HBT, LDMOS




Write a chapter of PIDS comparable in size and content


to the ERD chapter in 2001

Working Strategy

RF and A/MS Technologies for Wireless Communications Working Group 2 April 2003
-

Work In Progress


Not for Publication

9

PIDS RF and A/MS Technologies for Wireless Communications WG



PIDs


Overall


Reliability


Emerging Research Devices




Design

Overall

SoC systems




Assembly & Packaging




Test




Front End Processes




Others?

Links to other TWGs