BCW61 Series Small Signal Transistors (PNP)

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Nov 2, 2013 (3 years and 7 months ago)

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BCW61 Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88171 www.vishay.com
09-May-02 1
New Product
Small Signal Transistors (PNP)
Features
¥ PNP Silicon Epitaxial Planar Transistors
¥ Suited for low level, low noise, low
frequency applications in hybrid cicuits.
¥ Low Current, Low Voltage.
¥ As complementary types, BCW60 Series NPN
transistors are recommended.
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx.0.008g
Marking
BCW61A = BA
Code:
BCW61B = BB
BCW61C = BC
BCW61D = BD
Packaging Codes/Options:
E8/10K per 13Óreel (8mm tape), 30K/box
E9/3K per 7Óreel (8mm tape), 30K/box
.016 (0.4)
.056 (1.43
)
.037(0.95)
.037(0.95)
max. .004 (0.1)
.122 (3.1)
.016 (0.4)
.016 (0.4)
1
2
3
Top View
.102 (2.6)
.007 (0.175)
.045 (1.15)
.110 (2.8)
.052 (1.33
)
.005 (0.125)
.094 (2.4)
.037 (0.95)
TO-236AB (SOT-23)
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics
Ratings at 25¡C ambient temperature unless otherwise specified.
Parameter Symbol Value Unit
Collector-Emitter Voltage (V
BE
= 0) ÐV
CES
32 V
Collector-Emitter Voltage ÐV
CEO
32 V
Emitter-Base Voltage ÐV
EBO
5.0 V
Collector Current (DC) ÐI
C
100 mA
Peak Collector Current ÐI
CM
200 mA
Base Current (DC) ÐI
B
50 mA
Power Dissipation P
tot
250 mW
Maximum Junction Temperature T
j
150 ¡C
Storage Temperature Range T
STG
Ð65 to +150 ¡C
Thermal Resistance, Junction to Ambient Air R
θ
JA
500
(1)
°
C/W
Note:
(1) Mounted on FR-4 printed-ciruit board.
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
Mounting Pad Layout
Pin Configuration
1.
Base
2.
Emitter
3.
Collector
BCW61 Series
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com Document Number 88171
2 09-May-02
Electrical Characteristics
Ratings at 25¡C ambient temperature unless otherwise specified.
Symbol Min.TYP.Max.Unit
DC Current Gain
at ÐV
CE
= 5 V, ÐI
C
= 10
µ
A BCW61A h
FE
Ð Ð Ð Ð
at ÐV
CE
= 5 V, ÐI
C
= 10
µ
A BCW61B h
FE
30 Ð Ð Ð
at ÐV
CE
= 5 V, ÐI
C
= 10
µ
A BCW61C h
FE
40 Ð Ð Ð
at ÐV
CE
= 5 V, ÐI
C
= 10
µ
A BCW61D h
FE
100 Ð Ð Ð
at ÐV
CE
= 5 V, ÐI
C
= 2 mA BCW61A h
FE
120 Ð 220 Ð
at ÐV
CE
= 5 V, ÐI
C
= 2 mA BCW61B h
FE
180 Ð 310 Ð
at ÐV
CE
= 5 V, ÐI
C
= 2 mA BCW61C h
FE
250 Ð 460 Ð
at ÐV
CE
= 5 V, ÐI
C
= 2 mA BCW61D h
FE
380 Ð 630 Ð
at ÐV
CE
= 1 V, ÐI
C
= 50 mA BCW61A h
FE
60 Ð Ð Ð
at ÐV
CE
= 1 V, ÐI
C
= 50 mA BCW61B h
FE
80 Ð Ð Ð
at ÐV
CE
= 1 V, ÐI
C
= 50 mA BCW61C h
FE
100 Ð Ð Ð
at ÐV
CE
= 1 V, ÐI
C
= 50 mA BCW61D h
FE
110 Ð Ð Ð
Collector-Emitter Saturation Voltage
at ÐI
C
= 10 mA, ÐI
B
= 0.25 mA ÐV
CEsat
60 Ð 250 mV
at ÐI
C
= 50 mA, ÐI
B
= 1.25 mA ÐV
CEsat
120 Ð 550 mV
Base-Emitter Saturation Voltage
at ÐI
C
= 10 mA, ÐI
B
= 0.25 mA ÐV
BEsat
600 Ð 850 mV
at ÐI
C
= 50 mA, ÐI
B
= 1.25 mA ÐV
BEsat
680 Ð 1050 mV
Base-Emitter Voltage
at ÐV
CE
= 5 V, ÐI
C
= 2 mA ÐV
BE
600 650 750 mV
at ÐV
CE
= 5 V, ÐI
C
= 10
µ
A ÐV
BE
Ð 550 Ð mV
at ÐV
CE
= 1 V, ÐI
C
= 50 mA ÐV
BE
Ð 720 Ð mV
Collector-Emiter Cut-off Current
at ÐV
CE
= 32 V, V
EB
=0 ÐI
CES
Ð Ð 20 nA
at ÐV
CE
= 32 V, V
EB
=0, T
A
= 150
°
C Ð Ð 20
µ
A
Emitter-Base Cut-off Current
at ÐV
EB
= 4 V, I
C
=0
ÐI
EBO
Ð Ð 20 nA
Gain-Bandwidth Product
at ÐV
CE
= 5 V, ÐI
C
= 10 mA, f = 100 MHz
f
T
100 Ð Ð MHz
Collector-Base Capacitance
at ÐV
CB
= 10 V, f = 1 MH
Z,
I
E
=0
C
CBO
Ð 4.5 Ð pF
Emitter-Base Capacitance
at ÐV
EB
= 0.5 V, f = 1 MH
Z,
I
C
=0
C
EBO
Ð 11 Ð pF
Noise Figure
at ÐV
CE
= 5 V,ÐI
C
= 200
µ
A, R
S
= 2 k

, f = 100 kH
Z
, B = 200Hz
F Ð 2 6 dB
Small Signal Current Gain BCW60A Ð 200
at ÐV
CE
= 5V, ÐI
C
= 2 mA, f = 1.0 kH
Z
BCW60B Ð 260
BCW60C
h
fe
Ð 330
BCW60D Ð 520
Turn-on Time at R
L
= 990

(see fig.1)
Ð V
CC
= 10V, ÐIc = 10mA, ÐI
B(on)
= I
B(off)
= 1mA
t
on
Ð 85 150 ns
Turn-off Time at R
L
= 990

(see fig.1)
Ð V
CC
= 10V, ÐIc = 10mA, ÐI
B(on)
= I
B(off)
= 1mA
t
off
Ð 480 800 ns
BCW61 Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88171 www.vishay.com
09-May-02 3
10%
90%
90%
90%
10%
10%
t
off
t
s
t
f
t
d
t
r
t
on
INPUT
OUTPUT
Fig.1 - Switching Waveforms