2N5401 Amplifier Transistors

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Nov 2, 2013 (3 years and 9 months ago)

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2N5401
Preferred Device
Amplifier Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
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COLLECTOR
3
MAXIMUM RATINGS
2
Rating Symbol 2N5400 2N5401 Unit
BASE
Collector − Emitter Voltage V 120 150 Vdc
CEO
Collector − Base Voltage V 130 160 Vdc
CBO 1
EMITTER
Emitter − Base Voltage V 5.0 Vdc
EBO
Collector Current − Continuous I 600 mAdc
C
Total Device Dissipation P
D
@ T = 25°C 625 mW
A
Derate above 25°C 5.0 mW/°C
TO−92
Total Device Dissipation P
D
CASE 29
@ T = 25°C 1.5 Watts
C
STYLE 1
Derate above 25°C 12 mW/°C
1
2
Operating and Storage Junction T , T −55 to +150 °C
J stg
3
Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not nor-
MARKING DIAGRAM
mal operating conditions) and are not valid simultaneously. If these limits are ex-
ceeded, device functional operation is not implied, damage may occur and reli-
ability may be affected.
2N54xx
THERMAL CHARACTERISTICS
YWW
Characteristic Symbol Max Unit
Thermal Resistance, R 200 °C/W

JA
Junction−to−Ambient
Thermal Resistance, R 83.3 °C/W

JC
Junction−to−Case
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2004 1 Publication Order Number:
May, 2004 − Rev. 1 2N5401/D2N5401
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
(1)
Collector−Emitter Breakdown Voltage V Vdc
(BR)CEO
(I = 1.0 mAdc, I = 0) 2N5400 150 −
C B
2N5401
Collector−Base Breakdown Voltage V Vdc
(BR)CBO
(I = 100 Adc, I = 0) 2N5400 160 −
C E
2N5401
Emitter−Base Breakdown Voltage V 5.0 − Vdc
(BR)EBO
(I = 10 Adc, I = 0)
E C
Collector Cutoff Current I
CBO
(V = 120 Vdc, I = 0) 2N5401 − 50
CB E
(V = 120 Vdc, I = 0, T = 100°C) 2N5401 − 50
CB E A
Emitter Cutoff Current I − 50 nAdc
EBO
(V = 3.0 Vdc, I = 0)
EB C
ON CHARACTERISTICS (Note 1)
DC Current Gain h −
FE
(I = 1.0 mAdc, V = 5.0 Vdc) 50 −
C CE
(I = 10 mAdc, V = 5.0 Vdc) 60 240
C CE
(I = 50 mAdc, V = 5.0 Vdc) 50 −
C CE
Collector−Emitter Saturation Voltage V Vdc
CE(sat)
(I = 10 mAdc, I = 1.0 mAdc) − 0.2
C B
(I = 50 mAdc, I = 5.0 mAdc) − 0.5
C B
Base−Emitter Saturation Voltage V Vdc
BE(sat)
(I = 10 mAdc, I = 1.0 mAdc) − 1.0
C B
(I = 50 mAdc, I = 5.0 mAdc) − 1.0
C B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product f MHz
T
(I = 10 mAdc, V = 10 Vdc, f = 100 MHz) 100 300
C CE
Output Capacitance C − 6.0 pF
obo
(V = 10 Vdc, I = 0, f = 1.0 MHz)
CB E
Small−Signal Current Gain h −
fe
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 40 200
C CE
Noise Figure NF − 8.0 dB
(I = 250 Adc, V = 5.0 Vdc, R = 1.0 k , f = 1.0 kHz)
C CE S
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION

Device Package Shipping
2N5401 TO−92 5000 Unit / Bulk
2N5401RL1 TO−92 2000 Tape & Reel
2N5401RLRA TO−92 2000 Tape & Reel
2N5401RLRAG TO−92 2000 Tape & Reel
(Pb−Free)
2N5401RLRM TO−92 2000 Tape & Ammo Box
2N5401ZL1 TO−92 2000 Tape & Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifica-
tions Brochure, BRD8011/D.
http://onsemi.com
22N5401
200
150
T = 125°C
J
100
25°C
70
50
- 55°C
V = -1.0 V
CE
30
V = -5.0 V
CE
20
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
0.6
I = 1.0 mA 10 mA 30 mA 100 mA
C
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
I , BASE CURRENT (mA)
B
Figure 2. Collector Saturation Region
3
10
V = 30 V
CE
2
10
m
I = I
C CES
1
10
T = 125°C
J
0
10
75°C
-1
10
REVERSE FORWARD
-2
10
25°C
-3
10
0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
V , BASE-EMITTER VOLTAGE (VOLTS)
BE
Figure 3. Collector Cut−Off Region
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3
h , CURRENT GAIN
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE FE
I , COLLECTOR CURRENT ( A)
C2N5401
1.0 2.5
T = 25°C T = -55°C to 135°C
J J
0.9 2.0
0.8 1.5
0.7 1.0
V @ I /I = 10
BE(sat) C B
0.5
0.6
for V
VC CE(sat)
0
0.5
0.4 -0.5
0.3 -1.0
-1.5
0.2
V @ I /I = 10
CE(sat) C B
for V
VB BE(sat)
0.1 -2.0
q
0 -2.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA)
C C
Figure 4. “On” Voltages Figure 5. Temperature Coefficients
100
T = 25°C
J
70
50
V V
BB CC
+ 8.8 V -30 V
30
10.2 V
C
20
ibo
100 3.0 k R
C
V
in
10
V
out
0.25 F
10 s R
7.0
B
INPUT PULSE C
obo
5.0
5.1 k
t , t ≤ 10 ns 1N914 3.0
V 100
r f in
DUTY CYCLE = 1.0%
2.0
1.0
Values Shown are for I @ 10 mA 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 6. Switching Time Test Circuit Figure 7. Capacitances
1000 2000
I /I = 10
700
C B
t @ V = 120 V
r CC
1000
T = 25°C
500
J
I /I = 10
C B
t @ V = 120 V
f CC
700
T = 25°C
J
300
500
t @ V = 30 V
r CC
200
t @ V = 30 V
f CC
300
100 200
t @ V = 120 V
s CC
70
100
50
70
30
50
t @ V = 1.0 V
d BE(off)
20
V = 120 V 30
CC
10 20
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA)
C C
Figure 8. Turn−On Time Figure 9. Turn−Off Time
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4
t, TIME (ns) V, VOLTAGE (VOLTS)
, TEMPERATURE COEFFICIENT (mV/ °C)
V
t, TIME (ns) C, CAPACITANCE (pF)2N5401
PACKAGE DIMENSIONS
TO−92
CASE 29−11
NOTES:
ISSUE AL
1. DIMENSIONING AND TOLERANCING PER ANSI
A
Y14.5M, 1982.
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L INCHES MILLIMETERS
DIM MIN MAX MIN MAX
SEATING
PLANE K
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
D
H 0.095 0.105 2.42 2.66
XX
J 0.015 0.020 0.39 0.50
G
K 0.500 --- 12.70 ---
J
H
L 0.250 --- 6.35 ---
N 0.080 0.105 2.04 2.66
V
C
P --- 0.100 --- 2.54
R 0.115 --- 2.93 ---
SECTION X−X
V 0.135 --- 3.43 ---
1
N
STYLE 1:
N PIN 1. EMITTER
2. BASE
3. COLLECTOR
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52N5401
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2N5401/D
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