Physical Electronics 5400 ESCA (XPS) (X-ray Photoelectron Spectroscopy

tickbitewryMechanics

Oct 30, 2013 (3 years and 10 months ago)

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AM
PAC

MATERIALS CHARACTERIZATION FACILITY

12443 Research Parkway


Suite 304


Orlando, FL 32826

(407) 882
-
1500


Fax (407) 882
-
1502


ampacmcf@
ucf.edu

Advanced Materials Processing and Analysis Center

University of Central Florida


Box 162455


Engineering Building I, Room 381


Orlando, FL 32816
-
2455

(407) 882
-
1455


Fax (407) 882
-
1462


ampac@u
cf.edu

www.ampac
.ucf.edu




P
hysical Electronics 5400 ESCA (XPS)

(X
-
ray Photoelectron Spectroscopy
)



Elemental compos
i
tion



All elements except H and He



Oxidation states



Depth profiling



No specimen preparation necessary



UHV compatible solids, 17 mm diameter



Physical Electronics
600 AES/SAM

(Auger Electron Spectroscopy) (Scanning Auger Microprobe)



Elemental composition



All elements except H and He



Depth profiling



No specimen preparation necessary



UHV compatible solids, 17 mm diameter


AES uses an electron beam to excite a sample, and then measures the energies of secondary electrons
emitted. Elemental composition information (and some chemical information) is obtained from the top
few atomic layers. AES detects all elements except H and

He and is most effective on electrically
conductive surfaces. Elemental maps can be constructed from the sample to reveal the spatial
distribution of elements on the surface. An attached ion gun allows one to obtain elemental depth profiles
from the samp
le.



Contact Information:

Engineer: Kirk Scammon





(
407
)
882
-
1514







kirk.scammon@
ucf.edu























AM
PAC

MATERIALS CHARACTERIZATION FACILITY

12443 Research Parkway


Suite 304


Orlando, FL 32826

(407) 882
-
1500


Fax (407) 882
-
1502


ampacmcf@
ucf.edu

Advanced Materials Processing and Analysis Center

University of Central Florida


Box 162455


Engineering Building I, Room 381


Orlando, FL 32816
-
2455

(407) 882
-
1455


Fax (407) 882
-
1462


ampac@u
cf.edu

www.ampac
.ucf.edu






Rigaku D/MAX XRD

(X
-
Ray Diffraction)



40KV Copper X
-
ray tube



Theta, 2 Theta Goiniometer



Laue Back Reflection
Camera Sample

holders for both Power and Solid Samples



Datascan 4 Acquisition Software



Jade 7 Analysis Software with JCPDS Database


X
-
Ray diffraction is a technique that measures the intensity of x
-
rays diffracted by a sample material to
gain information from that mat
erial. XRD can determine the crystal structure and lattice parameters of
crystalline materials. Single crystals can be oriented for cutting using XRD. Texture and orientation of
thin films can also be examined. In some cases, residual stress and degree

of crystallinity can be
obtained. The JCPDS database can be used for phase identification of unknown samples.





Rigaku D/MAX XRD II

(X
-
Ray Diffraction)



40KV Copper X
-
ray tube



Theta, 2 Theta Goiniometer



Thin Film Diffraction Attachment



Datascan

4 Acquisition Software



Jade 7 Analysis Software with JCPDS Database


X
-
Ray diffraction is a technique that measures the intensity of x
-
rays diffracted by a sample material to
gain information from that material. XRD can determine the crystal structure an
d lattice parameters of
crystalline materials. Single crystals can be oriented for cutting using XRD. Texture and orientation of
thin films can also be examined. In some cases, residual stress and degree of crystallinity can be
obtained. The JCPDS data
base can be used for phase identification of unknown samples.



Contact Information:

Engineer: Kirk Scammon

(407)
882
-
1514

kirk.scammon@ucf.edu












AM
PAC

MATERIALS CHARACTERIZATION FACILITY

12443 Research Parkway


Suite 304


Orlando, FL 32826

(407) 882
-
1500


Fax (407) 882
-
1502


ampacmcf@
ucf.edu

Advanced Materials Processing and Analysis Center

University of Central Florida


Box 162455


Engineering Building I, Room 381


Orlando, FL 32816
-
2455

(407) 882
-
1455


Fax (407) 882
-
1462


ampac@u
cf.edu

www.ampac
.ucf.edu







C
ameca IMS
-
3F SIMS Ion Microscope

(Secondary Ion Mass Spectrometry)



Depth resolution: ~5nm



Lateral resolution: ~1mkm



Mass resolution (M/delta M): from 200 to more than 10000



Mass range: 0
-
250 amu



Primary ions: O2+, O
-
, Ar+, Xe+, Cs+ from 5 to 15kV



Maximum sample size: 1*1*1 cm



Mass analyzer type: magnetic sector



PHI Adept 1010 Dynamic SIMS
System

(Secondary Ion Mass Spectrometry)



Depth resolution: ~ 1nm



Lateral resolution: ~ 1mkm



Mass resolution: ~100



Mass range: 0
-
340 amu



Primary ions: O2+, Ar+, Xe+, Cs+ from 250eV to 8kV



Scanning electron gun allows for bulk insulators analysis



Maximum sam
ple size: 5*5*1cm



Mass analyzer type: quadrupole


SIMS (Secondary Ion Mass Spectrometry) is an analytical technique that is used to characterize the
surface and near surface (~30mkm) region of materials. It is capable of detecting practically all elements,

including hydrogen (only the noble gases are difficult to measure) with detection limits in ppm range for
most elements and ppb range for some. There are several modes of SIMS instrument operation:

1.

Static SIMS


allows molecular as well as elemental chara
cterization of the first top monolayer.

2.

Dynamic SIMS


provides for the investigation of bulk composition or the depth distribution of the
trace elements.

3.

Ion imaging


allows lateral imaging and, if combined with depth profiling,
-
3D compositional
reconst
ruction for heterogeneous samples.

4.

Isotope ratio measurement


another unique technique of SIMS making it possible to measure
isotope ratio with precision of 0.1% and better.

SIMS can be applied to any type of material (insulators, semiconductors, metals,
and organic molecules)
that can stay under vacuum.


Contact Information:

Engineer:
Mikhail Klimov

(407) 882
-
1509

mikhail.klimov@ucf.edu







AM
PAC

MATERIALS CHARACTERIZATION FACILITY

12443 Research Parkway


Suite 304


Orlando, FL 32826

(407) 882
-
1500


Fax (407) 882
-
1502


ampacmcf@
ucf.edu

Advanced Materials Processing and Analysis Center

University of Central Florida


Box 162455


Engineering Building I, Room 381


Orlando, FL 32816
-
2455

(407) 882
-
1455


Fax (407) 882
-
1462


ampac@u
cf.edu

www.ampac
.ucf.edu


General IONIX 1.7 MV

Tandetron RBS

(Rutherford Backscattering Spectroscopy)



Depth profiling



Film thickness



Stoichiometry



H, He, and Cs sources



Accepts planar solids from ~2 x 2 mm to 25 x 25 mm with no more than 15 mm



Hydrogen Forward Scattering Spectroscopy


RBS analysis is performed by bombarding a sample target with a mono

energetic beam of high
-
energy
particles, typically helium, with
an energy

of a few MeV. Some of the incident atoms scatter backwards
from heavier atoms in the near surface region of the target material, and are detected with a solid
-
state
detector that mea
sures their energy. The energy of a backscattered particle is related to the depth and
mass of the target atom, while the number of backscattered particles detected from any given element is
proportional to the concentration. A depth profile of the upper 1
-
2

m of the sample is possible. The
depth resolution is 2
-
30 nm. The lateral resolution is 1 mm and the maximum depth is ~2

m (20

m
with H+). The primary applications of RBS are the quantitative composition depth profiling of thin film
structures. RBS i
s also used to accurately determine the thickness of thin films if the density of the film is
known. Detection limits are 1
-
10 atomic % for low atomic number elements and 0
-
100 ppm for high
atomic number elements. All elements except H and he may be detect
ed.



Contact Information:

Engineer:
Kirk Scammon





(
407
)
882
-
1514







kirk.
scammon
@
ucf.edu




LEICA
EM

UC7/FC7 Ultramicrotomy
:
The high quality

microtome for precise room temperature
and cryo sectioning.


The Leica EM UC7 prepares excellent quality semi
-

and ultra
-
thin sections, as well as the perfectly smooth
surfaces required for LM, TEM, SEM, and AFM examination for biological samples, polymer samples, soft
materials and composites. The precision mechan
ics, ergonomic design, and intuitive layout of the
touch
screen

control unit make the Leica EM UC7 ideal for the highest quality specimen preparation by getting
tens nanometers thickness.


The Leica EM FC7
provides three different cryo
-
modes: Standard; Hi
gh gas flow


increased LN2 gas
flow reduces ice contamination below
-
140
°
C and Wet sectioning

-

to set a tem
perature difference of up
to 130
°
C between knife (
-
40
°
C) and specimen (
-
170
°
C), which is useful for, e.g., DMSO applications.


Contact
Information:

Engineer: TBA








AM
PAC

MATERIALS CHARACTERIZATION FACILITY

12443 Research Parkway


Suite 304


Orlando, FL 32826

(407) 882
-
1500


Fax (407) 882
-
1502


ampacmcf@
ucf.edu

Advanced Materials Processing and Analysis Center

University of Central Florida


Box 162455


Engineering Building I, Room 381


Orlando, FL 32816
-
2455

(407) 882
-
1455


Fax (407) 882
-
1462


ampac@u
cf.edu

www.ampac
.ucf.edu



Zeiss ULTRA
-
55 FEG SEM
(
Scanning Electron Microscopy)



Schottky field emission source



Resolution 1 nm @ 15 KV, 1.7 nm @ 1 KV



STEM Detector



In lens Secondary and Backscatter detectors



Noran

System 7 EDS with Silicon Drift Detector x
-
ray detector



Nabity Electron Beam Lithography System


The Zeiss Ultra
-
55 SEM has a unique design to the final
lens;

it is electrostatic instead of electromagnetic.
This feature allows the microsc
ope to image
magnetic materials

without distortion from created by a
magnetic field. This microscope is also capable of delivering very high lateral resolution at low voltages.
The Nabity Electron Beam Lithography system allows researchers to create nanometer scale pat
terns
using the pattern generator in conjunction with the electron beam. The Noran System 7 EDS system with
Silicon Drift Detector can acquire the EDS spectrum much faster tha
n

a conventional SiLi detector and
can detect elements as light as Boron.


JEOL J
SM
-
6480

SEM (Scanning Electron Microscopy)



Variable pressure SEM



Sec
ondary Electron resolution : 30

nm (High Vacuum mode)



Back
-
scattered Electron resolution : 50 nm (Variable Pressure mode)



X15 to x300,000 magnification



Accelerating Voltage: 0.3 to 30 kV



Specimen size: 150mm diameter Maximum



Backscattered Electron Detector



Infrared ChamberScope


The
JEOL JSM
-
6480

SEM provides a variable pressure mode of operation that allows microscopy of
damp
,
oily and non
-
conductive samples. It has a unique differential

pumping system with a real
-
time vacuum
feedback (RVF) for VP mode. This SEM has automated functions for filament saturation, gun alignment,
brightness, contract and stigmatism.


JEOL 733 Super Probe (Electron Microprobe)



Four wavelength spectrometers



Hig
h sensitivity for light elements



Energy dispersive spectrometer



Automated and remote operation



Multiposition stage holds up to 4 specimens



Accepts specimens up to 32 mm diameter


The JEOL 733 Super Probe is equipped with 4 wavelength spectrometers. Dispers
ion crystals are
available for the determination of all elements with an atomic number of 5 (Boron) and higher. The lower
limits of detection vary with each element and the sample matrix, but are typically 100 to 200 ppm. The
smallest analyzed volumes are
generally 1
-
2

m
3
.


Contact Information:

Engineer:
Kirk Scammon





407
-
882
-
1509







kirk.
scammon
@
ucf.edu


AM
PAC

MATERIALS CHARACTERIZATION FACILITY

12443 Research Parkway


Suite 304


Orlando, FL 32826

(407) 882
-
1500


Fax (407) 882
-
1502


ampacmcf@
ucf.edu

Advanced Materials Processing and Analysis Center

University of Central Florida


Box 162455


Engineering Building I, Room 381


Orlando, FL 32816
-
2455

(407) 882
-
1455


Fax (407) 882
-
1462


ampac@u
cf.edu

www.ampac
.ucf.edu





FEI Tecnai F30 TEM (Transmission Electron Microscopy)



Resolution 0.20 nm point to point, 0.102 nm line



10,000,000X magnification STEM



1,000,000X magnification TEM



SEG with hot and cold stages



STEM configuration



High angle annular dark field (HAADF) detector



Electron Holography



Gatan Image Filter (GIF)


The FEI Tecnai F30 is an analytical electron microscope (AEM), which can function as a

conventional
transmission electron microscope (TEM) or a scanning transmission electron microscope (STEM). It has a
field emission gun (FEG) and it can operate up to an accelerating voltage of 300KV. It includes both an
energy dispersive x
-
ray detector (X
EDS) and an electron energy loss spectrometer (PEELS) for elemental
analysis. The spot size can be reduced to <0.3 nm for the chemical analysis and
micro diffraction

studies.





JEOL TEM
-
1011 (Transmission Electron Microscope)



LaB6 filament with Cool Beam

Illumination System



0.2 nm line resolution and 0.4 nm point resolution



Computer
-
controlled electron
-
optical system



Digital image processing


JEM
-
1011 is a simple, dependable imaging instrument for high throughput of images with excellent
contrast and definition. With an acceleration voltage flexibility of 40 to 100kV, it is suitable for all
biological, polymer and thin materials science specimens
. Its high contrast objective lens
pole piece

combines

the highest possible contrast and brightness with optimum resolution. The JEOL patented cool
beam gun allows high
-
brightness, high coherence illumination conditions with filament
-
saving low
emission
current. JEM
-
1011 has a unique feature of 2
-
specimen holder where two specimens are
introduced into the column at the same time in the “Quick Change” holder, facilitating fast imaging
throughput and instant comparison under the same operating conditions.

Other features include user
friendly controls, file storage, automatic filament heating, and automatic exposure micrograph
photography.


Contact Information:

Engineer: Mikhail Klimov

(407) 882
-
1509

Mikhail.klimov@ucf.edu








AM
PAC

MATERIALS CHARACTERIZATION FACILITY

12443 Research Parkway


Suite 304


Orlando, FL 32826

(407) 882
-
1500


Fax (407) 882
-
1502


ampacmcf@
ucf.edu

Advanced Materials Processing and Analysis Center

University of Central Florida


Box 162455


Engineering Building I, Room 381


Orlando, FL 32816
-
2455

(407) 882
-
1455


Fax (407) 882
-
1462


ampac@u
cf.edu

www.ampac
.ucf.edu


FEI 200 TEM FIB (Focused
Ion Beam Instrument)



30 kV gallium liquid metal ion source



Accepts specimens up to 5 cm diameter



Ion beam assisted platinum deposition



Iodine enhanced etch



Selective carbon mill etch



Secondary electron and ion images


The 200 TEM FIB removes material by sp
uttering using gallium at lateral resolution of approximately 5
nm. Platinum metal can also be deposited by ion beam assisted chemical vapor deposition. Gas assisted
etching and selective carbon milling may also be performed. FIB has a wide range of applic
ations:



Specimen preparation for SEM and TEM. TEM cross
-
section specimens can be prepared within two
hours.



Ion channeling contrast imaging



Device modification


mainly semi
-
conductor industry

Micro machining


example: trimming AFM tips or drilling patter
ns to make optical grating or optical
lenses



Contact Information:

Engineer:
Mikhail Klimov

(407) 882
-
1509

Mikhail.klimov@ucf.edu











Olympus LEXT OLS 3000
Confocal
Scanning Microscope



Plane resolution of 0.12µm (best suite
d
for 1.5mm to 1µm)



Simultaneous 3D and "true color" image acquisition



3
-
D measurement of 1mm to 0.5µm for volume, capacity, surface area, thickness of a thin
transparent film



Non
-
contact roughness analysis with resolution of 0.1µm


The LEXT OLS
-
3000IR is a near
-
IR laser base
d confocal microscope LEXT combines a 408nm laser with
optics specifically designed for operation at this wavelength to optimize image quality and limit
aberrations. Olympus software provides a simple user interface, fast processing and advanced analysis i
n
a single solution. Brightfield, Darkfield and Differential Interference Contrast (DIC) Microscopy techniques
are possible in both video and laser confocal imaging modes. The new confocal laser DIC mode is
especially useful for highlighting subtle textura
l variations during surface analysis.



Contact Information:

Engineer:
Kirk Scammon





(
407
)
882
-
1514







kirk.scammon@ucf.edu











AM
PAC

MATERIALS CHARACTERIZATION FACILITY

12443 Research Parkway


Suite 304


Orlando, FL 32826

(407) 882
-
1500


Fax (407) 882
-
1502


ampacmcf@
ucf.edu

Advanced Materials Processing and Analysis Center

University of Central Florida


Box 162455


Engineering Building I, Room 381


Orlando, FL 32816
-
2455

(407) 882
-
1455


Fax (407) 882
-
1462


ampac@u
cf.edu

www.ampac
.ucf.edu



Renishaw RM 1000B Micro
-
Raman Spectrometer



Imaging CCD Detector



Ar
-
514nm Excitation Unit


Raman spectroscopy is a
spectroscopic technique to study vibrational, rotational, and other low
-
frequency
modes. It relies on inelastic scattering, or Raman scattering of monochromatic light, usually from a laser
in the visible, near infrared, or near ultraviolet range. The laser

light interacts with phonons or other
excitations in the system, resulting in the energy of the laser photons being shifted up or down. The shift
in energy gives information about the phonon modes in the system. Raman spectroscopy offers several
advantage
s for microscopic analysis. Since it is a scattering technique, specimens do not need to be fixed
or sectioned. Raman spectra can be collected from a very small volume (< 1 µm in diameter); these
spectra allow the identification of species present in that
volume. Water does not interfere very strongly.
Thus, Raman spectroscopy is suitable for the microscopic examination of minerals, materials such as
polymers and ceramics, cells and proteins.



Contact Information:

Engineer:
Mikhail Klimov

(407) 882
-
1509





mikhail.klimov@
ucf.edu