ABSTRACT: Effects of electric and magnetic fields on the ... - QSpace

stewsystemElectronics - Devices

Oct 18, 2013 (4 years and 25 days ago)

83 views





Ilaiwi K. F., "Effects of electric and magnetic fields on the energy levels of a
hydrogenic impurity in GaAs/Gal-xAl x As heterjunction", Qatar University
Science Journal, 1997, Vol. 17, No. 2, Pages 225-230.

Abstract

Variational method within the effective  mass approximation is used to
calculate the shallow impurities states in GaAs / Gai_xAl^As heteroj unctions.
Modified Fang-Howard wavefunction is used as the trial wavefunction.
Magnetic and electric fields effects on the impurity binding energy for the
infinite and finite barrier heteroj unctions are presented.