carrier concentration: 1*10 cm from Hall measurement

statementdizzyeyedSemiconductor

Nov 1, 2013 (4 years and 2 months ago)

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ITO (80nm)
orNi
(5nm)/Au(10nm)

Mg
-
doped p
-
type
GaN

(2um)

Nucleation
GaN

(30nm)

Thick p
-
GaN

SPS: Si
-
doped n
+

In
0.23
Ga
0.77
N


-
GaN

(5/5

Å
)



deposited on n+
-
InGaN

GaN

SPS structures

carrier concentration: 1*10
19

cm
3

from Hall measurement

Ψ
m

Ψ
B

X

Ec

Ev

Efm

Semiconductor

Metal

Ef

X

Ec

Ev

Semiconductor

Ψ
m

Efm

Ef

Metal

Ψ
B

Ψ
B
=
Ψ
m
-
X > 0

Ψ
B
=
Ψ
m
-
X ≤ 0

Schottky

contact

Ohmic

contact


Results And Discussion