NCCAVS PLASMA APPLICATIONS GROUP (www.avsusergroups.org) FREE ADMISSIONNo need to register, just show up!!

salamiblackElectronics - Devices

Nov 27, 2013 (3 years and 6 months ago)

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NCCAVS

PLASMA APPLICATIONS
GROUP

(
www.avsusergroups.org
)


FREE ADMISSION

No need to register, just show up!!

Topic:

Plasma
Metrology and

Applications


Meeting Date:

November

14
,

201
3


Start
Time:



1
:
0
0



3
:00pm





Location:
SEMI Global Headquarters





Seminar rooms 1 & 2





3081 Zanker Road





San Jose, CA 95134




**
Park in front or behind the




vacant building across from SEMI**





Chair
s
:

David Coumou
,
MKS Instruments
,
David_Coumou@mksinst.com




Karl Umstadter
,
KLA
-
Tencor
,

karl.umstadter@kla
-
tencor.com



AGENDA



1
:00



1:10


Welcome and Introduction


1
:
1
0



1:35


The Convergence of 450mm, 22/14nm, EUV, and 3D (FinFET
-

NAND) Structures and
its Impact on the Semiconductor Equipment Industry”
, Dr. Robert Castellano, The Information
Network


Abstract:

We are entering the most dynamic period I’ve
witnessed in the 30 years of analyzing the
semiconductor industry. Never before has the confluence of technological and financial challenges in
semiconductor design, process technology and manufacturing threatened the co
ntinued progress of
Moore’s Law.
The

emergence of multiple, non
-
planar transistor architectures, stacked 3D IC
methodologies, 450mm wafer processing, and the continued uncertainty on high
-
volume EUV lithography
have placed enormous burdens on R&D efficiency, effectiveness and synergy/depende
ncy across the IC
manufactu
ring and design supply chain.
The implications of this convergence on the semiconductor
equipment industry will be discussed, whit a particular emphasis on the Plasma Etch Markets



1:35


2:10 “Wafer Based Temperature Metrolog
y for Semiconductor Manufacturing Process and
Equipments
”,
Youxian Wen,

Dinh Chu, Giampietro Bieli, SensArray
-
VLSI Division, KLA
-
Tencor


Abstract:

The
effect of wafer temperature to etch process has become more significant due to shrinkage
and complexity
of device technologies. To control and minimize the thermal effect, it is critical to
understand how to determine thermal sensitivity of process, define process thermal budget as well as
thermal stability and uniformity specification of the process and pro
cess tools. KLA
-
Tencor has developed
wireless wafer based temperature metrology solution for the industry for many years. In this talk, both
methodology and use cases of the wireless wafer based temperature metrology solution will be
presented. Character
ization of thermal stability and uniformity of process and process tools will be
discussed.




2:10


2:35


The Recent Evolution of the Semion Ion Flux Measurement Technology”
, Mike B.
Hopkins, PhD, CEO Impedans Ltd., Dublin Ireland


Abstract:

Electrical Diagnostics in plasma involve the measurement of the current voltage IV,
characteristic of the ion or electron current to a collector inside the Plasma and at the surface. The main
techniques use either Langmuir Probes or Retarding Field Energy
Analysers (RFEA) placed inside the
plasma. The Langmuir is ideal to measure the spatial and time dependent plasma parameters of the
volume of the plasma while RFEA’a are ideal at the walls and substrate holder to measure the particle
energy and flux the su
rface. Industry would also like to know the angle of ions arriving at the surface and
the species, including neutral fluxes. In our research we are working on RFEA’s that measures fast time
resolution is pulsed DC and RF plasma, and we have developed tech
nologies to measure ion flux as a
function of ion angle, and ion mass as part of an on
-
going evolution of the Semion RFEA product range to
meet industry needs. We will show initial mass and angle measurements on our RFEA system at the RF
biased electrode.



2:35


3:00

“A CCP
-
Plasma Source with Operation in the High
-
VHF to UHF Frequencies and
Scalability to 450mm Substrates”
, A.R. Ellingboe, Plasma Research Laboratory, School of Physical
Sciences and NCPST, Dublin City University, Ireland


Abstract:

Semico
nductor manufacturing is facing dramatic changes in terms of device structure and
materials and the looming addition of 450mm substrates. To meet these many new plasma processes
and the necessary supporting hardware must be developed. Historically, one of
the "knobs" used to
achieve some of the most challenging Dielectric
-
Etch steps was to increase the rf excitation frequency;
The big
-
three plasma etch companies have all developed VHF plasma systems to help them meet these
process requirements. The highest
frequency that can be used is limited by process uniformity, which in
turn is limited by plasma uniformity. Increasing substrate size to 450mm will require a drop in rf excitation
frequency, and potential drop in process performance.

In this presentation I will describe a multi
-
tile
plasma source design which enables further increases in rf frequency up to at least 400MHz and
simultaneously enables scalability to 450mm systems. Design concepts and experience in applying such
systems to

PECVD challenges will be presented and discussed. One such system has been used for
large
-
area (600mm x 720mm) PECVD of Silicon with an excitation frequency of 162 MHz. In this system
deposition rate and material properties across the tile
-
to
-
tile boundar
y is found to be constant. In addition,
by operating in the high
-
VHF mode high crystallinity films (>60%) are achieved at 30% Silane flow and
growth rates (>10A/s) demonstrating that high
-
freuqency plasma
-
chemistry is achieved in the system, as
well as lo
w induced rf
-
bias on the substrate at high power densities.



3:00 Close Meeting


All presentations will be requested to be posted on the PAG Proceedings webpage.






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please
check out our “NCCAVS Marketing/Sponsorship” opportunities at
:


http://www.avsusergroups.org/misc_pdfs/form_ug_sponsor.pdf