NORTH CAROLINA STATE UNIVERSITY

parkagendaElectronics - Devices

Nov 2, 2013 (3 years and 9 months ago)

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NORTH CAROLINA STATE UNIVERSITY

GRADUATE COURSE ACTION FORM


NOTE:

Click once on shaded fields to type data. To check boxes, right click at box, click “Properties”, and click “Checked” under D
efault Values.


D
EPARTMENT
/P
ROGRAM

Electrical and Computer Engi
neering

C
OURSE
P
REFIX
/N
UMBER

ECE5
53

P
REVIOUS
P
REFIX
/N
UMBER


D
ATE OF
L
AST
A
CTION


C
OURSE
T
ITLE

Semiconductor Power Devices

A
BBREVIATED
T
ITLE

S
EMICOND
P
WR
D
EV

S
CHEDULING
Fall

Spring

Summer

Every Year



Alt. Year Odd

Alt. Year Even

Other

C
OURSE
O
FFERED

B
Y
D
ISTANCE
E
DUCATION
O
NLY

O
N
C
AMPUS
O
NLY




B
OTH
O
N
C
AMPUS AND BY
D
I STANCE
E
DUCATI ON

C
REDI T
H
OURS
3


C
ONTACT
H
OURS
Lecture/Recitation
3

Seminar






Laboratory






Problem








Studio






Independent Study/Research






Internship/Practicum/Field Work






G
RADING

ABCDF

S/U


I
NSTRUCTOR
(N
AME
/R
ANK
)

B. Jayant Baliga, Distinguished University Professor


Graduate Faculty Status Associate

Full


A
NTICIPATED
E
NROLLMEN
T

Per semester
20

Max.Section
30

Multiple sections Yes

No


P
REREQUI SI TE
(
S
)

ECE404

C
OREQUI SI TE
(
S
)


P
RE
/C
OREQUISITE FOR


R
ESTRICTIVE
S
TATEMENT

Minimum enrollment of 15


C
URRICULA
/M
INORS


Required


Qualified Elective


P
ROPOSED EFFECTIVE DA
TE

Fall 2007


A
PPROVED EFFECTIVE DA
TE
__________________________


C
ATALOG
D
ESCRIPTION
(
limit to 80 words
):
The operational physics and design concepts for power semiconductor devices. Re
levant transport
properties of semiconductors. Design of breakdown voltage and edge terminations. Analysis of Schottky rectifiers, P
-
i
-
N rectifiers, Power
MOSFETs, Bipolar Transistors, Thyristors and Insulated Gate Bipolar Transistors.


R
ECOMMENDED BY
:



____
___________________________________________________________________

Department Head/Director of Graduate Programs


Date


E
NDORSED BY
:



___
____________________________________________________________________

Chair, College Graduate Studies Committee


Date



________________________________________________________________________

College Dean(s)



Date


A
PPROVED
:






_______________________________________________________________________



Dean of the Graduate School


Date

TYPE OF PROPOSAL



New Course


Drop Course




Course Revision


Dual
-
Level Course



REVISION


Content


Prefix/Number


Title






Abbreviated Title


Credit Hours




Contact Hours


Grading Method




Pre
-
Corequisites


Restrictive Statement




Description


Scheduling



DOCUMENTATION AS R
EQUIRED

Please number all document pages




Course Justification


Proposed Revision(s) with
Justification


Student Learning Objectives


Enrollment for Last 5 Years


New Resources Statement


Consultation with other Departments


Syllabus (Old and New)


Explanation of differences in
requirements of dual
-
level courses








2




Course Justification


All students that obtain a graduate (M.S. or Ph.D.) degree in the solid
-
state area should
have knowledge of (a) VLSI devic
es, (b) microwave devices, (c) optoelectronic devices, and
(d) power devices. Since m
ore than half of all the electricity used in the country is controlled
by power semiconductor devices
, this is an import topic for
future jobs on
research and
product deve
lopment

in the industry for our students
.
In addition, all

students
working on
power electronic circuits
should have a basic knowledge of the various types of power
semiconductor devices used by the industry
.


Student Learning Objectives


See syllabus



E
nrollment Previous Semesers


ECE592B Spring 06 19 students


New Resources Statement


No additional teaching or laboratory resources will be required by this
action apart from a classroom for instruction.









3





Syllabus


ECE 553: Semic
onductor Power Devices

Spring 2006


Course

Time
:


Tuesday and Thursday from 2:35 pm


3:50 pm




Building EB2, Room 1229


Instructor
:


Prof. B. Jayant Baliga




Distinguished University Professor of Electrical Engineering




Director, Power Semiconductor R
esearch Center





Phone: 515
-
6169




Email:
bjbaliga@unity.ncsu.edu


Office Hours
:

4:00



5:00 pm Tuesday and Thursday
at EGRC

Room 334


Text
:



Power Semiconductor Devices

Author: B. Jayant Baliga
;
Publishe
r: PWS Publishing Company


Prerequisites
:

ECE404


Prerequisite Topics: Semiconductor Physics

Semiconductor band structure,
drift and diffusion carrier transport.

Carrier injection and recombination.

P
-
N junctions, Field effect transistors, Bipolar Transist
ors.

For pre
-
requisite background see: B. G. Streetman and S. K. Banerjee “Solid State Electronic
Devices”, Pearson Prentice Hall, Sixth Edition.


Student Learning Objectives

Upon completion of this course, students will be able to


•define the ideal chara
cteristics for power devices,

•design the semiconductor properties required to achieve any desired breakdown voltage,

•analyze the on
-
state, leakage, and switching characteristics of Schottky and P
-
i
-
N rectifiers,

•analyze the on
-
state and switching charac
teristics of power transistors (MOSFETs, BJTs,
IGBTs),

•analyze the on
-
state and switching characteristics of power thyristors, and


calculate the power losses associated with power semiconductor devices in typical applications.








4





Course
Description
:


Int
roduction








1 lecture


Power Device Applications


Ideal Device Characteristics

Transport Physics







2 lectures


Mobility (bulk and Surface)





0.5

lecture


Intrinsic Carrier Concentration and Resistivity


0.5


Minority Carrier Lifetime (Recombinat
ion Physics)


1 lecture

Breakdown Voltage







3 lectures


One Dimensional Analysis (P
-
N and PNP)



1 lecture


Edge Terminations (Planar, FFR, FP, Bevel, JTE)


2 lectures

Schottky Rectifiers







3 lectures


Forward Conduction (Thermionic Emission)



1 l
ecture


Reverse Blocking (SB Lowering, Power Dissipation limit)

1 lecture


Thermal Considerations





1 lecture

P
-
i
-
N Rectifiers







3 lectures


Forward Conduction (Low level/High level Injection)

1 lecture


Reverse Blocking (Punch
-
Through, Leakage)


1 l
ecture


Reverse Recovery






1 lecture

Power MOSFETs







4 lectures


D
-
MOSFET Structure (Basics, P
-
N
-
P, BV)



1 lecture


On
-
Resistance (DMOS, UMOS)




1 lecture



Switching Performance





1 lecture


Safe
-
Operating
-
Area (Second Breakdown)



1 lecture

Mi
d
-
Term Exam







1 lecture

Power Bipolar Transistor






4 lectures


Current Transport Physics





2 lectures


Static Blocking Characteristics (Open E, Open B)


0.5 lecture


Dynamic Switching Characteristics (Turn
-
on, Turn
-
off)

1 lectures


Second Breakdow
n (FBSOA, RBSOA)



0.5 lecture

Power Thyristors







4 lectures


Static Blocking Characteristics




1 lecture


Forward Conduction Characteristics




1 lecture


Switching Characteristics





1 lectures


Gate
-
Turn
-
Off Thyr
is
tors





1 lecture

Insulated Gate

Bipolar Transistors





4 lectures


Static Blocking Characteristics (Reverse, Forward, P
-
T)

1 lecture


Forward Conduction Characteristics (Models, Vf)


1 lecture


Safe
-
Operating
-
Area (Latch
-
up, etc)




1 lecture




Switching Characteristics (Current Drop,

Turn
-
off tail)

1 lecture


Grading
:







5





The final course grade will be determined by the weighted average of:

Six (6
) Home Work Assignments


= 20
% of total final grade

Mid
-
Term Exam




= 3
0% of total final grade

Final Exam





= 5
0
% of total final grade


Hom
e Work Assignments

Homework problems will be assigned from the textbook to allow practicing of the concepts
covered in the classroom. Students may consult each other to obtain the solutions but must
submit the answers individually. All intermediate steps t
aken to get the solutions should be
included. The homework number and the individual problem numbers must be clearly shown on
the submitted answers to ensure proper credit.
All HW assignments must be turned
-
in at the class
on the due date to get credit.


M
id
-
Term Exam

A mid
-
term exam will be administered to test the knowledge of students at the middle of the
semester
. The
mid
-
term exam

will be
an open
-
book test
. Significant credit will be given to the
method used for solving the problem. This must be demons
trated by the student by clearly
showing all the steps required to solve the problem, including the formulae used to obtain the
numerical answers.

Only
the

University approved reasons will be accepted for missing
the mid
-
term exam

(S
ee
http://www.ncsu.edu/
policies/academic_affairs/pols_regs/REG205.00.4.php
).

A make
-
up
mid
-
term
exam
will be administered at the mutual convenience of the student and the Instructor. In all
cases, signed documentation must be provided to the Instructor and attached to the make u
p
mid
-
term exam

in order to obtain credit.


Final Exam

The final exam will include all the material covered in the course. The final exam is an ‘Open
Book’ exam with access to all information (such as class notes, textbook, homework solutions,
and
mid
-
ter
m exam

solutions). Significant credit will be given to the method used for solving the
problem. This must be demonstrated by the student by clearly showing all the steps required to
solve the problem, including the formulae used to obtain the numerical ans
wers.


General
Makeup Policy

If serious reasons prevent a student from taking an exam on the scheduled date the opportunity to
make
-
up will be offered according to the official acade
mic policies
(
http://www.ncsu.edu/policies/academic_affairs/pols_regs/REG2
05.00.4.php
).



Grading Scale for Course


The following system will be used to convert your weighted average score (
X
) for the home
-
works,
mid
-
term exam

and final exam into a letter grade:








6




Weighted Average Score

Letter Grade

97 < X

A+

93 < X < 97

A

90
< X < 93

A
-

87 < X < 90

B+

83 < X < 87

B

80 < X < 83

B
-

77 < X < 80

C+

73 < X < 77

C

70 < X < 73

C
-

67 < X < 70

D+

63 < X < 67

D

60 < X < 63

D
-

X < 60

F


Academic Integrity

Work in this course is to be done under the Academic Integrity Honor Ple
dge:

"I have neither given nor received unauthorized aid on this test or assignment."

Students must abide by the Code of Student Conduct,
http://www.ncsu.edu/po
licies/student_services/student_discipline/POL11.35.1.php

Evidence of copying, including copying of source code, or any other use of unauthorized aid
will be investigated and potentially referred to the University judicial system as a violation of
the
Cod
e of Student Conduct
. The
minimum sanction
for a violation is a zero on an
assignment. Recycling of projects from another class will be considered an academic integrity
violation.

Students with disabilities

Reasonable accommodations will be made for studen
ts with verifiable disabilities. In order to
take advantage of available accommodations, students must register with Disability Services
for Students at 1900 Student Health Center, Campus Box 7509, 515
-
7653.

For more
information on NC State's policy on working with students with disabilities, please see this
page (http://www.ncsu.edu/provost/hat/current/appendix/appen_k.html.)