ELEN E6302: MOS Transistors Fall 2008

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Nov 2, 2013 (3 years and 11 months ago)

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ELEN E6302: MOS Transistors

Fall 2008

Registration Information


Online Course Preview


COURSE BENEFITS




Students will gain a detailed
understanding of how MOSFETs work, and how to
model them.



Inadequacies in CAD models will be discussed, as will ways to correct them.



The understanding provided in this course is esse
ntial not only for device
model
ers, but also for designers of high
-
perfor
mance circuits.

PROFESSOR TSIVIDIS




Author of a

standard text on the topic of the course.



Contributed MOS model benchmarks incorporated into
IEEE
standards.



IEEE Fellow for his contributions to analog MOS integrated circuits.

APPLICABLE DEGREE PROGRAMS




M.
S., Ph.D.

ADDITIONAL COURSE FEES



Lecturer/Manager:

Yannis Tsividis

Office Hours:

Wednesday 10
-
12

Office Phone:

212
-
854
-
4229

E
-
mail Address:

tsividis@ee.columbia.edu


Day & Time of Class:

Monday and

Wednesday, 2:40
-
3:55

Viewing Schedule:


Class Lo
cation:

327 Mudd (tentative)

Class Homepage:

courseworks.columbia.edu

Credits for Course:

3

Class Type:

Lecture


Prerequisites:

ELEN E3106 (Solid State Devices and Materials) or equivalent.

Description:

Operation and model
ing of MOS transistors. MOS
two
-

and three
-
terminal
structures. The MOS transistor as a four
-
terminal dev
ice; general charge
-
sheet
model
ing; strong, moderate, and weak inversion models; short
-
and
-
narrow
-
channel effects; ion
-
implanted devices; scaling consi
derations in VLSI;
charge mo
del
ing; large
-
signal transient and small
-
signal
mode
ling for
quasistatic and nonquasistatic operation.

Required Text(s):

Yannis Tsividis,
Operation and Modeling of the MOS Transistor
,
2
nd

edition,
Oxford University

Press, 2003, ISBN

0195170148
.
(
The earli
er McGraw
-
Hill
second edition (1999) is identical. Contrary to amazon.com’s insistence, there
is
no
3d edition

out yet
.
)



Homework(s):

Homew
ork will be assigned each Monday (this may have to be pushed to
Wednesday on certain weeks
) and will be due on Mo
nday of the following
week.
No late homework will be accepted
.

Project(s):

Development of a model
.

Paper(s):

Project report
.

Midterm Exam(s):

October 27
.
CVN students, please make sure you can take it on that day; no
makeup exam will be given.

75 minute
s.
The exam will be closed book, but
you are allowed to bring with you a single 8.5" by 11" sheet of paper with
your notes, formulas etc., double
-
sided (no magnifying glass is allowed). You
will need a scientific calculator.

Final Exam:

December 8.
CVN st
udents, please make sure you can take it on that day; no
makeup exam will be given.

75 minutes.
The exam will be closed book, but
you are allowed to bring with you a single 8.5" by 11" sheet of paper with
your notes, formulas etc., double
-
sided (no magnify
ing glass is allowed). You
will need a scientific calculator.

Grading:

Te
ntative: Homework 10%, Midterm 30%, Project 20%, Final 4
0%.

Hardware Requirements:

Any platform capable of running the required software.

Software Requirements:

MATLAB (or any othe
r math package) and any version of SPICE.

Homework Submission:

Through CVN.




Tentative schedule


Class


No.

Date

Topics/Chapters Covered

Assigned


Due




1


W,
Sept.
3


Background review (semiconductors and
junctions).


HW #1




2

M, Sept. 8

M
OSFET overview. The 2
-
terminal MOS
structure.


HW #2


HW #1



3


W,
Sept. 1
0

The 2
-
terminal MOS structure, cont'd.





4

M,
Sept. 1
5


The
3
-
terminal MOS structure
.


HW #3


HW #2



5

W, Sept. 17

The long
-
channel MOS transistor charge
-
sheet model.






6

M,
Sept.
2
2

The long
-
channel MOS transistor charge
-
sheet model, cont’d.

HW #4


HW #3



7

W, Sept. 24

Complete strong inversion model.
Approximate strong inversion models.





8


M,
Sept. 29

Weak inversion models. Source reference vs.
body reference.


HW #5


HW #4



9

W, Oct. 1

Effective mobility.





10


M,
Oct.
6

Implanted transistors. Enhancement and
depletion devices.


HW #6


HW #5



11

W, Oct. 8

Short channel effects. Channel length
modulation.





12


M,
Oct. 1
3

Two
-
dimensional charge sharing
. Narrow
channel effects.


HW #7

HW #6



13

W, Oct. 15

Punchthrough.

Velocity saturation.





14


M,
Oct. 2
0


Hot carrier effects. Thin oxide effects.
Source
resistance. Other effects.



PROJECT


HW #7


15

W, Oct.
2
2

Scaling.





16


M,
Oct.
27

MIDTERM

HW #8

-


17

W,
Oct. 29

Large
-
signal dynamic operation.






-


M,
Nov.
3


ACADEMIC HOLIDAY




18

W, Nov.
5

Large signal dynamic operation, cont’d.

HW #9


HW #8




1
9

M,
Nov.
10


Charge modeling.


HW #10

HW #9



20

W, Nov. 1
2

Quasi
-
static and non
-
quas
i
-
static modeling.






21


M,
Nov.
17


Small
-
signal modeling.


-

HW #10



22

W, Nov.
19

Small
-
signal modeling, cont’d.





23


M, Nov. 2
4


Noise. Complete small
-
signal quasi
-
static
modeling.


HW #11

PROJEC
T
REPORT



24

W, Nov. 2
6

Non
-
quasistatic small
-
signal modeling.




25

M, Dec.
1

Non
-
quasistatic small
-
signal modeling,
cont’d. RF modeling.



HW #11


26

W, Dec. 3

Considerations for CAD models.





27

M, Dec.

8

FINAL EXAM





For more information, comments, or suggestions, please email us at
cvn@columbia.edu
.


Last Update:

June 1, 2008
.