(a) Professional Preparation - Electrical & Computer Engineering ...

parkagendaElectronics - Devices

Nov 2, 2013 (3 years and 11 months ago)

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SIDDHARTH RAJAN


Research Interests

High
-
performance semiconductor devices, novel materials, molecular beam epitaxy,
heterostructure and transport physics.

Professional Preparation

Birla Institute of Technology and Science
-
Pilani, Electrical Engineering B.
E., 2001

Birla Institute of Technology and Science
-
Pilani, India Physics B.S., 2001

University of California
-
Santa Barbara Electrical and Computer Engineering M.S., 2004

University of California
-
Santa Barbara Electrical and Computer Engineering Ph.D. 2006

Appointments

08/08
-
present

Assistant Professor, Electrical and Computer Engineering/Materials Science and
Engineering, The Ohio State University

06/07
-
07/08

Assistant Project Scientist, University of California
-
Santa Barbara

01/07
-
06/07

Staff Scientist,
General Electric Global Research Center, Niskayuna

Honors and Awards

2007


Best Paper Award
at Workshop on Frontiers of Electronics 2007

2005


Best Paper Award

at the 2005 TMS Electronics Materials Conference.

2000

JNC Summer Fellowship
for undergraduat
e research awarded by JNC
-
ASR,
Bangalore, India

Publications

30
publications in refereed

international

journals, over 30 conference presentations

(list attached)

Over 250 citations

in the last 5 years
, h
-
index = 10.

Service

Graduate Advisor: Digbijoy Nath,

Pil Sung Park

Doctoral Committee of Si
-
Young Park, Chieh
-
kai Yang

OSU
ECE Department Graduate Recruit
ment and Fellowship Committee

Reviewer:

IEEE
Electron Device Letters, Solid
-
State Electronics, Physica Status Solidi C

Organizer:
Solid State Electronics
and Photonics Conference Series at Ohio State University

JOURNAL PAPERS

2009

30
.

Pei, Y.; S. Rajan, M. Higashiwaki, Z. Chen, S. P. DenBaars, U.K.Mishra,

Effect of
Dielectric Thickness on Power Performance of AlGaN/GaN HEMTs

IEEE Elec. Dev. Lett.
30
(4),
Page(s):

313
-
315 (2009).


29.
Fujiwara,

Tetsuya
,
Siddharth

Rajan
, Stacia Keller,
Masataka

Higashiw
aki,
James

S. Speck.
;
Steven

P.

DenBaars;
Umesh

K Mishra., “Enhancement
-
Mode m
-
Plane Heterojunction

AlGaN/GaN Transistor”,

Applied Physics Express, Volume 2, Issue 1, pp. 011001 (2009).


28.

Adele C. Tamboli
,
Mathew C. Schmidt
,
Siddharth Rajan
,
James S. Speck
,
Umesh K.
Mishra
,
Steven P. DenBaars
, and
Evelyn L. Hu
, Smooth Top
-
Down Photoelectrochemical
Etching of
m
-
Plane GaN, J. Electrochem. Soc., Volume 156, Issue 1, pp. H47
-
H51 (2009).


2008

27
. S. Keller, C. S. Su
h, N. A. Fichtenbaum, M. Furukawa, R. Chu, Z. Chen, K. Vijayraghavan,
S. Rajan
, S. P. DenBaars, J. S. Speck, and U. K. Mishra, Influence of the substrate misorientation
on the properties of N
-
polar InGaN/GaN and AlGaN/GaN heterostructures, J. Appl. Phys. 1
04,
093510 (2008).


26. Properties of N
-
polar AlGaN/GaN heterostructures and field effect transistors grown by
metal
-
organic chemical vapor deposition

Stacia Keller, Chang Soo Suh, Zhen Cheng, Rongming Chu, Siddharth Rajan, Nicholas
Fichtenbaum, Motoko Fur
ukawa, Steven P. DenBaars,


James S. Speck, and Umesh K Mishra,

Journal of Applied Physics 103, 033708 (2008).



25. AlGaN Channel High Electron Mobility Transistors: Device Performance and Power
-
Switching Figure of Merit

Ajay Raman, Sansaptak Dasgupta, Da
vid Brown, Siddharth Rajan, James S. Speck and Umesh K.
Mishra,
Jpn. J. Appl. Phys.
47

(2008) pp. 3359
-
336


24.
Electrical characterization of low defect density nonpolar (110) a
-
plane GaN grown with

sidewall lateral epitaxial overgrowth (SLEO),

Imer,

Bilge
;
Haskell,

Benjamin
;
Rajan,

Siddharth
;
Keller,

Stacia
;
Mis
hra,

Umesh

K.
;
Nakamura,

Shuji
;
Speck,

James

S.
;
Denbaars,

Steven

P.
, Journal of Materials Research, vol. 23,
i
ssue 2, pp. 551
-
55


23. R. M. Chu, C. Poblenz, M. H. Wong, S. Dasgupta, S. Rajan, Y. Pei, F. Recht, L. K. Shen, L.
K. Shen, J. S. Speck, and U. K. Mishra, "Improved performance of plasma
-
assisted molecular
beam epitaxy grown AlGaN/GaN high electron mobilit
y transistors with gate
-
recess and CF4
treatment," Applied Physics Express, vol. 1, art no. 061101, 2008


22. S. Keller, C. S. Suh, N. A. Fichtenbaum, M. Furukawa, R. M. Chu, S. Rajan, S. P. DenBaars,
J. S. Speck, and U. K. Mishra, "Influence of the substr
ate misorientation on the properties of N
-
polar InGaN/GaN and AlGaN/GaN heterostructures," Journal of Applied Physics, vol. 104 (9),
art no. 093510, 2008

JOURNAL PAPERS (CONTD.)


21. M. H. Wong, Y. Pei, R. M. Chu, S. Rajan, B. Swenson, D. F. Brown, S. Kel
ler, S. P.
DenBaars, J. S. Speck, and U. K. Mishra, "N
-
Face metal
-
insulator
-
semiconductor high electron
mobility transistors with AlN back
-
barrier," IEEE Electron Device Letters, vol. 29 (10), pp. 1101
-
1104, 2008

20. Electron Mobility in N
-
polar GaN/AlGaN/
GaN Heterostructures

David F. Brown, Siddharth Rajan, Stacia Keller, Steven P. DenBaars, Umesh K. Mishra, Appl.
Phys. Lett. 93, 042104

(2008).



19. Study of Interface barrier of SiNx/GaN interface for Nitrogen
-
polar GaN based High Electron
Mobility Transi
stors

Nidhi, Siddharth Rajan, Stacia Keller, Feng Wu, Steven P. Denbaars, James S. Speck. and Umesh
K. Mishra,
J. Appl. Phys.
103
, 124508

(2008).


18. Properties of oxide deposited on c
-
plane AlGaN/GaN heterostructure

Vert, A.V.; Rajan, S., Electronics Let
ters , vol.44, no.12, pp.773
-
774, June 5 2008

17. AlGaN/GaN HEMTs: Recent Developments and Future Directions

Siddharth Rajan, Umesh K. Mishra, and Tomas Palacios, to appear in International Journal of
High Speed Electronics and Systems



2007


16. N
-
polar
GaN/AlGaN/GaN High Electron Mobility Transistors,

S. Rajan, A. Chini, M. Wong , J.S. Speck, and U.K. Mishra, Journal of Applied Physics 102,
044501 (2007).


15. N
-
face High Electron Mobility Transistors with a GaN
-
spacer

M.H. Wong, S. Rajan, R.M. Chu, T. P
alacios, C.S. Suh, L.S. McCarthy, S. Keller, J.S. Speck and
U.K. Mishra, Phys. Stat. Sol. (a) 204, 2049 (2007).

2006

14. Electron Mobility in Graded AlGaN Alloys

Siddharth Rajan, Huili Xing, Debdeep Jena, Steve P. Denbaars and Umesh K. Mishra, Applied
Phys
ics Letters 88, 042109 (2006).


13. Characterisation of multiple carrier transport in indium nitride, grown by molecular beam
epitaxy

T. B. Fehlberg, G. A. Umana
-
Membreno, B. D. Nener, G. Parish, C. S. Gallinat, G. Koblmueller,
S. Rajan, S. Bernardis, and
J. S. Speck, Japanese Journal of Applied Physics Part 2
-
Letters &
Express Letters 45 (37
-
41): L1090
-
L1092 Oct 2006


12. Carrier transport and confinement in polarization
-
induced 3D electron slabs: Importance of
alloy scattering in AlGaN

John Simon, Albert
Wang, Siddharth Rajan, Huili Xing and Debdeep Jena, Applied Physics
Letters, Appl. Phys. Lett. 88, 042109 (2006).



JOURNAL PAPERS (CONTD.)


11. Review of Recent Developments in Growth of AlGaN/GaN High
-
Electron Mobility
Transistors on 4H
-
SiC by Plasma
-
Ass
isted Molecular Beam Epitaxy

Andrea Corrion, Christiane Poblenz, Patrick Waltereit, Tomas Palacios, Siddharth Rajan, Umesh
K.


Mishra and Jim S. Speck, IEICE Transactions, E89
-
C (7), pp. 906
-
912.



2005


10. Growth and Electrical Characterization of N
-
face

AlGaN/GaN Heterostructures

S. Rajan, M. Wong, Y. Fu, F. Wu, J.S. Speck, and U.K. Mishra, Japanese Journal of Applied
Physics, Vol. 44, No. 49, , pp. L1478
-
L1480, 2005.


9. Ion Implanted GaN/AlGaN HEMTs with non
-
alloyed Ohmic Contacts

Haijiang Yu, L. McCar
thy, S. Rajan, S. Keller, S. Denbaars, J. Speck, U. Mishra,


IEEE Electron
Device Letters, 26 (5), pp. 283
-
285, May 2005.



8. Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN/GaN high
electron mobility transistors grown by molec
ular beam epitaxy (MBE)

C. Poblenz, P. Waltereit, S. Rajan, U. K. Mishra, J. S. Speck, P. Chin, I. Smorchkova, and B.
Heying, J. Vac. Sci. Technol. B 23, 1562 (2005)



7. Influence of the Dynamic Access Resistance in the g
m

and f
T

Linearity of AlGaN/GaN
HE
MTs

T. Palacios , S. Rajan, A. Chakraborty, S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra,
IEEE Trans. Elec. Dev., 52 (10), pp. 2117
-
2123 (2005).



6. High
-
Power AlGaN/GaN HEMTs for Ka
-
Band Applications

T. Palacios, A. Chakraborty, S. Rajan, C. P
oblenz, S. Keller, S. P. DenBaars, J. S. Speck, and U.
K. Mishra, IEEE Elec. Dev. Lett. 26 (11), pp. 781
-
783


(2005)


2004



5. MBE
-
Grown AlGaN/GaN HEMTs on SiC

Siddharth Rajan, Christiane Poblenz, Patrick Waltereir, Arpan Chakraborty, James S. Speck and
U
mesh K. Mishra,

International Journal of High Speed Electronics and Systems, 14 (3), pp. 732
-
737 (2004).



4. An AlGaN/GaN Polarization
-
Doped Field
-
Effect Transistor for Microwave Power
Applications

Siddharth Rajan, Huili Xing, Debdeep Jena, Steve Denbaars

and Umesh Mishra


Appl. Phy. Lett.
84 (9), pp. 1591
-
1593,

March 1, 2004.



3. Power Performance of AlGaN/GaN HEMTs grown on SiC by Plasma
-
Assisted MBE

Siddharth Rajan, Patrick Waltereit, Christiane Poblenz, Sten J. Heikman, Daniel S. Green, James
S. Speck

and Umesh K. Mishra

JOURNAL PAPERS (CONTD.)


IEEE Electron Device Letters, 25 (5), pp. 247
-
249, May 2004.



2. Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors

Christiane Poblenz, Patrick Waltereit, Siddharth Raj
an, Sten J. Heikman, Umesh K. Mishra and
James S. Speck, Journal of Vacuum Science & Technology B, 22(3), pp.1145
-
1149,


May 2004.



1. Structural Properties of GaN Buffer Layers on 4H
-
SiC(0001) Grown by Plasma
-
Assisted
Molecular Beam Epitaxy for High Elec
tron Mobility Transistors

Patrick Waltereit, Christiane Poblenz, Siddharth Rajan, Feng Wu, Umesh K. Mishra and James S.
Speck, Japanese Journal of Applied Physics, 43 (12A), pp. L1520
-
L1523, 2004





CONFERENCE PRESENTATIONS


Surface Passivation of AlGaN/G
aN HEMTs

Siddharth Rajan, Yi Pei, Zhen Chen, Steve P. DenBaars, and Umesh K. Mishra,

Device Research Conference 2008, Santa Barbara CA .



Electron Transport in N
-
polar Vicinal AlGaN/GaN Heterostructures

Siddharth Rajan, Yun
-
Hao Hsieh, Steve P. DenBaars, J
ames S. Speck and Umesh K. Mishra,

Electronic Materials Conference 2008, Santa Barbara CA .



Electron Transport in N
-
polar Vicinal AlGaN/GaN Heterostructures

Siddharth Rajan, Eric Hsieh, Steve P. DenBaars, James S. Speck and Umesh K. Mishra,
WOCSEMMAD 200
8, Pal Springs, USA, February 2007.



Migration
-
enhanced epitaxy of N
-
polar Indium Nitride

Siddharth Rajan, Man Hoi Wong, Feng Wu, James S. Speck and Umesh K. Mishra, EMC 2007,


Las Vegas, USA, February 2007.



Migration
-
enhanced epitaxy of N
-
polar Indium
Nitride

Siddharth Rajan, Man Hoi Wong, Feng Wu, James S. Speck and Umesh K. Mishra,
WOCSEMMAD 2007, Savannah, USA, February 2007.



Advanced Transistor Structures Based on N
-
face GaN

S. Rajan, A. Chini, M. Wong, C. Suh, Y. Fu, M. J. Grundmann, F. Wu, J. S.

Speck and U. K.
Mishra32nd International Symposium on Compound Semiconductors (ISCS), Sept 18
-
22 2005,
Europa
-
Park Rust, Germany



N
-
face Modulation Doped Field Effect Transistors

S. Rajan, F. Wu, M. Wong, Y. Fu, J. S. Speck and U. K. Mishra, 6th Internat
ional Conference on
Nitride Semiconductors (ICNS) 2005, Aug 28
-

Sept 2 2005, Bremen, Germany.



Structural and Electrical Characterization of N
-
face GaN grown on C
-
face SiC by MBE

CONFERENCE PRESENTATIONS (CONTD.)


Siddharth Rajan; Feng Wu; Manhoi Wong; Ye
nyun Fu; James S. Speck; Umesh K. Mishra, 47th
Electronic Materials Conference, June 22
-
24 (2005), Santa Barbara, California USA.



Electron Mobility in Graded AlGaN Layers

Siddharth Rajan, Tomas Palacios, Steven P. Denbaars and Umesh K. Mishra, WOCSEMMAD
2005, Miami, USA, February 2005.



Progress in the Development of an all
-
MBE HEMT

Siddharth Rajan,


Christiane Poblenz, Patrick Waltereir, Arpan Chakraborty, James S. Speck and
Umesh K. Mishra, 11th Advanced Heterostructure Workshop, Hawaii, 2004.



MBE
-
Gr
own AlGaN/GaN HEMTs on SiC

Siddharth Rajan,


Christiane Poblenz, Patrick Waltereir, Arpan Chakraborty, James S. Speck and
Umesh K. Mishra, IEEE Lester Eastman Conference on High Performance Devices, August
2004, Troy, NY, USA.



Tailoring of Transconductan
ce Profile for Improved Linearity in AlGaN/GaN Polarization
-

Doped Field Effect Transistors

Siddharth Rajan; Xing, Huili ; Chakraborty, Arpan ; Chini, Alessandro ; Grundmann, Michael J.;
Palacios, Tomas ; DenBaars, Steven P.; Jena, Debdeep ; Mishra, Umesh
K.., International
Workshop on Nitride Semiconductors, July 2004, Pittsburgh, PA, USA.



Growth and Power Performance


of MBE
-
grown AlGaN/GaN HEMTs

Siddharth Rajan, Patrick Waltereit, Christiane Poblenz, Sten J. Heikman, James S. Speck and
Umesh K. Mishra,

International Workshop for Physics of Semiconductor Devices (IWPSD),
December


2003, Chennai, India.



Characterization of MOCVD
-
Grown N
-
Polar GaN/AlGaN Heterostructures:

Nidhi Nidhi; Siddharth Rajan; Stacia Keller; Steven DenBaars; Umesh Mishra. Accepted

Electronic Materials Conference 2008, Santa Barbara CA .



AlGaN Channel HEMTs Grown by PAMBE: Structural and Device

Characterizations


Sansaptak Dasgupta; Ajay Raman; Siddhath Rajan, Umesh Mishra,

Accepted Electronic
Materials Conference 2008, Santa Barb
ara CA



Gate Leakage Reduction in AlGaN/GaN HEMTs Grown by Plasma
-

Assisted MBE

Rongming Chu; Christiane Poblenz; Man Hoi Wong; Sansaptak Dasgupta; Siddharth Rajan; Yi
Pei; Likun Shen; James Speck; Umesh Mishra,

Accepted Electronic Materials Conference 20
08,
Santa Barbara CA





CONFERENCE PRESENTATIONS (CONTD.)


Polarization
-
induced 3
-
Dimensional slabs in Graded AlGaN layers

John Simon, Siddharth Rajan, Kejia Wang, Huili Xing and Debdeep Jena, to be presented at 2006
MRS Fall Meeting, Boston



Dipole Engi
neering in Nitride
-
based HEMTs

T. Palacios, S. Rajan, A. Chakraborty, S. Keller, S. P. DenBaars, and U. K. Mishra, 208th
Meeting of the Electrochemical Society, Los Angeles, October 16
-
21 2005



An Experimental Method to Identify Bulk and Surface Traps in
GaN HEMTs

A. Chini, Y. Fu, S. Rajan, J. S. Speck and U. K. Mishra, 32nd International Symposium on
Compound Semiconductors (ISCS), Sept 18
-
22 2005, Europa
-
Park Rust, Germany,



Fabrication and Characterization of N
-
face GaN/AlGaN/GaN HEMTs


A. Chini, S. Ra
jan., M. Wong, Y. Fu, J. S. Speck, U. K. Mishra, 63rd Device Research
Conference, June 20
-
22 (2005), Santa Barbara, California USA



Ion implantation for unalloyed ohmic contacts to AlGaN/GaN HEMTs

Yu, H.; McCarthy, L.; Rajan, S.; Keller, S.; Denbaars, S.P
.; Speck, J.S.; Mishra, U.K.; Device
Research Conference, 2004. 62nd DRC. Conference Digest [Late News Papers volume included],
21
-
23 June 2004 Page(s):37
-

38 vol.1



Influence of the access resistance in the rf performance of mm
-
wave AlGaN/GaN HEMTs

Pala
cios, T.; Rajan, S.; Shen, L.; Chakraborty, A.; Heikman, S.; Keller, S.; DenBaars, S.P.;
Mishra, U.K, Device Research Conference, 2004. 62nd DRC. Conference Digest 21
-
23 June
2004 Page(s):75
-

76 vol.1