Graphene: New Facets in Ultra-Flat Nanoelectronics

micefunctionalUrban and Civil

Nov 15, 2013 (3 years and 10 months ago)

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Graphene:
New Facets in Ultra
-
F
lat Nano
e
lectronics


Arindam Ghosh

Associate Professor
,
Department of Physics

Indian Institute of Science
,
Bangalore, India


Since

the
emergence of
g
raphene, the field of nanoelectronics
has been

undergoing a paradigm
shift.
This

reflects in
building electronic elements

on a
platform

of new materials that come with an intrinsic
atomic confinement.



The most notable

of
this is
g
raphene, but other examples include
m
olybdenum di
s
ulphide,
topological
insulators such as
b
ismuth
s
e
lenide/
t
eluride, and so on.
T
he atomic or molecular scale confinement
in
many of these materials can be realized
with simple techniques like
mechanical
exfoliation, which has
triggered
a
new design of field
-
effect transistors that offer not only speed and
efficiency, but also

novel
concepts in

fundamental
science and

device applications.


I shall discuss some of the outstanding challenges and

possibilities in this new era of na
noelectronics.

This will consist of evaluating

the impact of extraneous factors,

such as the subst
rate

and
the charge
environment

on limiting the performance of atomically thin
field effect transistors both in terms of
carrier mobility and low
-
frequency noise
.


In the context of fundamental physics,
I shall highlight some

new quantum

effects,
connected to

valleys
in
g
raphene, that
illustrate

the
enhanced functi
o
nality

of
ultra
-
flat nanoelectronics
over
that based on
conventional two
-
dimensional electron systems.






1.

"Graphene and the revolution in nanoscale electronics", Arinda
m Ghosh,
Physics News

(Bulletin of Indian
Physics Association)

41
,

44

50 (2011).

2.

"Microscopic mechanism of 1/f noise in graphene: Role of energy band dispersion", Atindra Nath Pal,
Subhamoy Ghatak, Vidya Kochat, Sneha E. S., Arjun B. S., Srinivasan Raghava
n and
Arindam Ghosh
,
ACS
Nano

5,
2075

2081 (2011).

3.

"Large low
-
frequency resistance noise in chemical vapor deposited graphene", Atindra Nath Pal, Ageeth A.
Bol and
Arindam Ghosh
,
Applied Physics Letters

97,
133504 (2010).

4.

"Design of a cryogenic amplifier

using GaAs MESFET", Koushik R. and
Arindam Ghosh
,
Indian Journal of
Cryogenics
35,

391 (2010).

5.

"Ultra
-
low noise field
-
effect transistor from multilayer graphene", Atindra Nath Pal and
Arindam Ghosh
,

Applied Physics Letters

95,
082105 (2009)

6.

“Resistance
noise in electrically biased bilayer graphene", Atindra Nath Pal and
Arindam Ghosh
,

Physical
Review Letters

102,

126805 (2009).


Arindam Ghosh

Associate Professor

Department of Physics
,
Indian Institute of Science

Bangalore 560012
,
India.

Tel:

+91 (0)80 22
93 3288

Fax: +91 (0)80 2360 2602

Email: arindam@physics.iisc.ernet.in

Website:
http://www.physics.iisc.ernet.in/~arindam/people/Arindam_Journal.htm


Arindam Ghosh is an experimental physicist with research
interest extending over several fields in classic
al and quantum
solid state physics. He completed his PhD research from the
Indian Institute of Science in 2000, where he investigated the
effect of Coulomb interaction on the electrical properties of
semiconductor and metals close to metal
-
insulator transi
tion.


Following
his
PhD,
Dr Ghosh
held the position of Research
Associate at the Cavendish Laboratory, University of
Cambridge,
un
til

Nov 2005. During this period his research activities expanded to
semiconductor nanostructures, effects of Coulomb intera
ction in mesoscopic systems, and
spontaneous spin effects in semiconductors. At the Indian Institute of Science, Bangalore, Dr.
Ghosh

s

areas of
research

include

nanoelectronics with carbon and metallic nanosystems,
quantum information processing with semi
conductor nanostructures, and sensing with micro
and nano
-
electromechanical devices.


Dr. Ghosh has published over 50 papers, and
in 2005 was
registered
by
Engineering and
Physical Sciences Research Council (EPSRC), UK as a recognized researcher. He also
received the
UK
-
India Education and Research Initiative
A
ward in 2006, the IBM Nanotechnology Fellowship
in 2008, the Swarnajayanti Fellowship from the Government of India in 2009, and the Materials
Research Society of India
(
MRSI
)

medal in 2012.