1
Integrated Power Converters for high
efficiency RF Systems
By:
Aaron Pereira
Supervisor:
Prof. Graham Town & Prof Neil Weste
Department of Electronic Engineering
Macquarie University, NSW, Australia.
2
Outline
•
Introduction
•
Background
•
Solution
•
Gallium Nitride Material & Devices
•
PA + High Efficiency Modulator
•
Triquint 0.25u process & circuits designed
•
Further Work
•
Questions
3
Introduction
MQ University Department of Electronics:
ARC Linkage Grant
•
Integrated
Power
converters
for
renewable
energy
systems
•
100
MHz
Envelope
tracking
system
using
GaN
process
for
base
station
applications
•
Using
Triquint
existing
0
.
25
u
GaN
process,
to
design
a
high
frequency,
high
efficiency
modulator
to
be
integrated
into
a
Power
Amplifier
(HEPA)
module
for
base
stations
applications
.
4
Background
RF Power Efficiency
5
Quest for Power, Linearity & Efficiency
VDD
RL
Bias
Vout
Rs
Vs
Source
Input
Network
Output
Network
RF
-
in
Power
Amplifier
Antenna
RF
-
out
Q
I
Edge Constellation:
3pi/8, rotated 8
-
PSK
Schematic of PA
Actual Size
Stauth, Sanders, "Power supply rejection for RF amplifiers,"
(RFIC) Symposium
, June 2006
Popovic,Zoya, “High efficiency microwave PA with dynamic power supplies”, ECEN 5014, Spring 2009, University of Colorado, Bou
lde
r
6
Amplifier Classes
-
A, AB,B, C, D,E,F
Conduction Angle, Efficiency
Niehenke,E, “GaN Power Amplifiers” Niehenke Consulting
7
Non Linear PA v Linear PA’s
Can’t do amplitude modulation Can
-
but highly inefficient
Stauth, Sanders, "Power supply rejection for RF amplifiers,"
(RFIC) Symposium
, June 2006
8
Average Efficiency
9
Solution?
Dynamic Power Supplies
10
Solution
-
Research Objective
•
HPA +Dynamic power supply MMIC
•
Use Triquint Semiconductor 0.25u GaN Process to
fabricate a monolithic solution.
MMIC Photo : Courtesy if Stephen Diebold, Karlshue Institute of Technology
11
Gallium Nitride
–
Materials & Devices
RF & Power Electronics
12
Properties of GaN
Niehenke,E, “GaN Power Amplifiers” Niehenke Consulting
13
Anomalous Behaviour
-
Traps
Development of virtual
gates wrecks havoc in
device performance
Ventury, R. “PhD Thesis defence”, UCSB.
14
Traps affecting FET performance
Kink effects I
DS
v V
DS
Shift in Threshold V
TH
RF Dispersion
A
LBAHRANI
,S.A
, “ C
HARACTERIZATION
OF
T
RAPPING
IN
G
ALLIUM
N
ITRIDE
HEMT
S
”, P
H
D T
HESIS
, M
ACQUARIE
U
NIVERSITY
, A
USTRALIA
2011
15
Device Engineering
-
Field Plates & Passivation
Niehenke,E, “GaN Power Amplifiers” Niehenke Consulting
16
MQ
-
Arbitrary Pulsed Semiconductor Parameter
Analyser System (APSPA)
17
Pulsed I
-
V Measurements
Understanding TQTX devices
18
Pulsed I
-
V Measurement (Cont.)
19
PA + High Efficiency Modulator
Design Options
Technology
FCC regulations
Cost
Modulation Schemes
20
Power Amplifier Biasing
21
Amplifier
–
Load
-
lines
Switching PA as Power Converters
22
Demonstration of Class E amplifier
Electrodeless Fluorescent Lamps
Demonstration of Resonant Inverter Circuit for Electrodeless Fluorescent Lamps Using High Voltage GaN
-
HEMT Wataru Saito*, Tomoka
zu Domon**, Ichiro Omura*, Tomohiro
Nitta*, Yorito Kakiuchi*, Kunio Tsuda*** and Masakazu Yamaguchi* * Semiconductor Company, Toshiba Corp **Toshiba Business and
Li
fe Service ***R&D Center, Toshiba Corp
1 Komukai Toshiba
-
cho, Saiwai
-
ku, Kawasaki 212
-
8583, Japan
Phone: +81
-
44
-
549
-
2603, FAX: +81
-
44
-
549
-
2883, e
-
mail: wataru3.saito@toshiba.co.jp
13.56 MHz Class E Amplifier
620V/ 1.4 A GaN HEMT
–
90% at 9W Output
Power
23
DC
-
DC Converter Architecture
Using switching PAs
DC
-
DC Converter fabricated using FET’s
non
-
optimized for power conversion
Popovic,Zoya, “High efficiency microwave PA with dynamic power supplies”, ECEN 5014, Spring 2009, University of Colorado, Bou
lde
r
24
PA and Modulator Integration Challenges
–
Power Supply Rejection Ratio (PSSR)
FCC has strict regulations
regarding this.
Selection of filters and switching
frequencies critical
Stauth
, Sanders, "Power supply rejection for RF amplifiers,"
(RFIC) Symposium
, June 2006
25
Triquint 0.25u GaN Process &
Circuit Designs
26
27
Circuits Design
-
Ring Oscillators, inverters, tuned amplifiers
28
Circuits Designed
-
MMIC Layout
Ring Oscillators, Inverters, Tuned Amplifiers
29
Further Work
•
Switching PA’s E/F
•
Class AB PA (16 Weeks)
•
Filters for noise rejection (8 Weeks)
•
Integration (20
-
24 Weeks)
•
Thermal Issues (16 Weeks)
•
Testing (14 Weeks)
30
Questions?
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