072_15_2009

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1 Νοε 2013 (πριν από 3 χρόνια και 11 μήνες)

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Homework assignment due
Tuesday, March 31


You are to take this exam and re
-
answer the
questions using a different color pencil or pen.


You are to work alone but you may consult
your notes, the textbook or the lectures.


Each of the 25 problems will be graded as 0, 1
or 2


you can earn 50 more points for your
homework score.


The goal for you is to learn the fundamentals
and also improve the grade

Final oral and written reports


You are to choose a topic of interest to you in
the general area of materials and devices.


PowerPoint presentation in class


approximately 7 minutes
--

April 30 & May 5


Short written report (3 to 5 pages) due May 7


save as “your name” and submit via e
-
mail.


Grading will be based on topic, impact &
English


Feel free to communicate with me concerning
ideas.


Exam #2


in class May 7




Julius Edgar Lilienfeld (1881
-
1963)

was an Austrian
-
Hungarian physicist. He
was born in Lemberg in Austria
-
Hungary

Among other things, he invented the field
effect transistor (in 1925) and the electrolytic
capacitor in the 1920s. He filed several
patents describing the construction and
operation of transistors as well as many
features of modern transistors. When
Brattain, Bardeen and Shockley tried to get a
patent on their device, most of their claims
were rejected due to the Lilienfeld patents.


Basic structure of the MOSFET

Basic idea of the MOSFET

-

-

Basic model of the MOSFET

-

E

Characteristics of the MOSFET

Biasing controls this voltage

Application of the MOSFET

MOS capacitor

A

o

MOS capacitor p type semiconductor

voltage bias effects

E

G

V

MOS capacitor p type semiconductor

voltage bias effects

battery switched

G

V

E

G

V

MOS capacitor p type semiconductor
gate voltage V
G

= 0

MOS capacitor p type semiconductor
--

gate voltage V
G

< 0

G

V

MOS capacitor p type semiconductor
gate voltage V
T

> V
G

> 0

G

V

G

V

MOS capacitor p type semiconductor
gate voltage V
G

= V
T
“threshold”

G

V

G

V

MOS capacitor p type semiconductor
gate voltage V
G

> V
T

G

V

G

V

Problem 6.1 Charge distributions are depicted in an
MOS capacitor. 1) Is the semiconductor n or p type?
2) Does the bias make it an accumulation mode,
depletion mode or an inversion mode?

Problem 6.1 Charge distributions are depicted in an
MOS capacitor. 1) Is the semiconductor n or p type?
2) Does the bias make it an accumulation mode,
depletion mode or an inversion mode?

Simple three
-
dimensional unit cell