Comparison of Performance of n- and p-Type Spin Transistors With Conventional Transistors

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Comparison of Performance of n- and p-Type Spin
Transistors With Conventional Transistors
D. Gvozdić, U. Ekenberg, L. Thylen
University of Belgrade
School of Electrical Engineering
http://www.etf.bg.ac.rs
JOURNAL OF SUPERCONDUCTIVITY, Vol. 18, No. 3, pp. 349-356, Mar, 2005
References:
Abstract:
A spintronic device that has stimulated much research interest is the Datta–Das spin transistor. The
mechanism behind it called the Rashba effect is that an applied voltage gives rise to a spin splitting.
We propose ways to optimize this effect. The relevant spin splitting in k-space is predicted to
increase with electric field at a rate that is more than two orders of magnitude larger for holes than
for electrons. Furthermore, the almost negligible lattice-mismatch between GaAs and AlGaAs can
be used to further enhance the advantage of hole-based spin transistors. Compared to present
transistors we conclude that electron-based spin transistors will have problems to become
competitive but hole-based ones are much more promising.
Keywords:
transistor, spin splitting, spintronics, hole subband, quantum well