# Optimization of MOSFET electrical characteristics using TCAD ... - UTM

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27 Νοε 2013 (πριν από 4 χρόνια και 5 μήνες)

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Fakulti
:

FAKULTI KEJURUTERAAN ELEKTRIK

Nama Matapelajaran:
Makmal Mikro
elektronik

Kod Matapelajaran :
SEW 4722

Semakan

Tarikh Keluaran

Pindaan Terakhir

No. Prosedur

: 1

: 20
1
3

: 20
1
3

:
PK
-
UTM
-
FKE
-
(0)
-
10

SEW

4722

FAKULTI KEJURUTERAAN ELEKTRIK

UNIVERSITI TEKNOLOGI MALAYSIA

KAMPUS SKUDAI

JOHOR

MICROELECTRONICS LABORATORY

STUDENT PACK

Disediakan oleh

:

Disahkan oleh

: Ketua Jabatan

Nama

:
Dr.
Suhana Mohamed

Sultan

Nama

:
Dr.
Shaikh
Nasir Shaikh Husin

Tandatangan

:

Tandatangan

:

Cop

:

Cop

:

Tarikh

:
9

September 201
3

Tarikh

:

Optimization of MOSFET electrical characteristics using TCAD
Tools

1.

Problem/Project Guide:

(a)

Problem
-
solving Time
-
line

You must know theoretically the fabrication
processes of a typical semiconductor device.

In order to be
familiarized with the TCAD simulation tool, refer to the manuals which are available in the lab

and online
.

Silvaco's ATHENA is used to simulate the processing conditions for the formation of the
device
.
This will be
followed by device characteristics (analogous to electrical testing of the device) using ATLAS tool
.
The simulation
exercise is divided into 3 parts:

(1)

Understanding the current p
rocess simu
lation given and plot

the electrical character
istics

(Id
-
Vg,Id
-
Vd)
.

(2)

Designing by adding or modifying the current process
to attain the target values of the
parameters:
Threshold voltage

,

I
ON
/I
OFF

ratio

and Subthreshold Swing.

(3)

Extract
the characteristics of the device structure and do the cross sections on the device due to parameter
changes.

The objective of
the
first part is to study the process flow of an n
-
MOSFET
,
characterize the electrical
characteristics and
observe the depleti
on mode characteristics.

The second part is aimed at
modifying the current process in ATHENA to observe any changes in the device
characterstics without changing the device dimensions.

The third part is to an
alyze the characteristic change using MOSFET

theory.

As a guide, you sh
-
line below
:

(a)
Pr
oblem
-
solving Time
-
line

Activities

Week 1

Week 2

Week 3

Week 4

1. Understand theory & problem,

familiarize with tool,

get started with NMOS process simulation

2. Process
Simulation,

d
o device characteristics, IV graphs

3. Introduce new process step to solve problem. Check if
problem solved. Otherwise go back to process simulation.

4. Demo/Presentation/Report Writing

(b)
Report Writing

Other tha
n the general guide specified by laboratory coordinator, your report must include

1.

Brief discussion of theory and problems

2.

Proposed solution
r

processing input script.

3.

Specified plots
-
IV plot, doping profiles etc.

4.

Conclusi
on

2.

Software:

Silvaco International

3.

(a)

Silvaco

Manuals

can be obtained from
the lab itself

or online
(
www.engr.sjsu.edu/~dparent/
Silvaco
/
athena
.pdf)

4.

References:

[1]

S.M.Sze, VLSI Technology
, 2
nd

Edition, McGraw
-
Hill Book Company, 1988

[2]

N. Arora,MOSFET Models for VLSI Circuit Simulation, Springer
-
Verlag,1993