SPHOORTHY TIMES…

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2 Νοε 2013 (πριν από 3 χρόνια και 9 μήνες)

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SPHOORTHY TIMES….



Wednesday
,
July
14
,
2010
.

Word for the Day
:

Subtilize,

\

SUHT
-
l
-
ahyz
\


, verb;



To make (the mind, senses, etc.) keen or discerning.



2.
To elevate in character.



3. To make thin, rare, or more fluid or volatile; refine.

Origin:
Subtilize

grew in popularity among practitioners of alchemy and early medical
theory.

Think About It
:

“Being a first it does not mean that u r the winner, it mea
ns u have
done something better than before.”


News

@ Sphoorthy
:

MBA,

MCA IV Semester

and MBA II
-
Semester

I
I
-
Internal
exam
s

will

commence from today
.

Top
News
:

Fast Transistors Could Save Energy

Transistors, the cornerstone of electronics, are lossy and t
herefore consume energy.
Researchers from the ETH Zürich and EPF Lausanne have developed transistors targeting
high switching speeds and higher output powers. The devices can be used more efficiently as
conventional transistors, so as to reduce energy cons
umption and CO2 emissions.


They consist of complex structures, some of which are only a few nanometers in
size, and can be found in most electronic networks: transistors built from semiconductor
materials deposited on a supporting substrate
such as silicon carbide (SiC). Colombo
Bolognesi, Professor for Millimeter
-
Wave Electronics at the ETH Zürich, and his research
group specialize in developing high
-
performance transistors intended to transmit information
as quickly and efficiently as possi
ble. In order to do this, electrons must move through the
semiconductor material as fast as possible. Just last year, Bolognesi`s group improved its own
speed record for so
-
called "High Electron Mobility Transistors (HEMTs)" based on
Aluminium
-
Gallium Nitr
ide (AlGaN/GaN) materials depossited on Silicon substrates (see
ETH Life article from 09.09.2009). Before then, comparable technologies showed cutoff
frequencies of 28 Gigahertz (GHz), but devices built by Bolognesi`s Group in the FIRST
cleanroom reached c
utoff frequencies as high as 108 GHz.

New Material
:
Bolognesi's team, now in collaboration with the group of Nicolas Grandjean
(who is a Professor of Physics at the EPF Lausanne) also explores a new material: instead of
using Aluminium
-
Gallium Nitride, the

researchers exploit the favorable properties of a newer
material combination consisting of Alumimium Indium Nitride (AlInN/GaN). The advantage
here is that AlInN has a significantly larger "forbidden energy gap" than other commonly used
semiconductors. Th
e so
-
called forbidden energy gap is one of the most important properties of
a semiconductor material.



Semiconductors featuring a large energy gap can be used to build transistors
which operate at much higher temperatures, sustain gre
ater voltage levels, and handle higher
signal power levels than possible with smaller gap conventional materials such as Silicon.
"Other researchers have already demonstrated that AlInN/GaN HEMT transistors can operate
at temperatures as high as 1000 C
--

that far exceeds the capabilities of Silicon and even
AlGaN/GaN transistors," says Bolognesi.



Until now, AlInN/GaN transistors were however slower than their AlGaN/GaN
counterparts. The researchers have now eliminated this problem. T
hey managed to break their
own record of 102 GHz, achieved with AlInN/GaN transistors built on Silicon, with an
AlInN/GaN transistor built on a Silicon Carbide substrate. In a single step, they increased the
cutoff frequency by 41 percent up to 144 GHz. "T
hat is a huge improvement," states
Bolognesi with delight. "Imagine for example a sprinter who would suddenly run the hundred
meter 40 percent faster." And fresh from the laboratory, as this article is being written,
Bolognesi reports that his team just me
asured cutoff frequencies as high as 200 GHz. "That
shatters all records in this research field."

Significant decrease in energy consumption
:
One possible commercial application of
similar transistors could be in the power amplifiers driving wireless trans
mitter antennaes.
There, Gallium Nitride transistors would help reduce energy costs thanks to their higher
efficiency. For example, "a mobile phone operator with 10'000 base stations equipped with
conventional power amplifiers consumes on average 30 Megawa
tt each year, with associated
CO
2

emissions of 100'000 tons," says Bolognesi. "Roughly 80 percent of that energy is just
wasted as heat, and even more if the transmitter equipment must be air conditioned."