INTERFACIAL MAGNETO-ELECTRIC SWITCHING IN MULTIFERROIC HETEROSTRUCTURES

lovelyphloxΗλεκτρονική - Συσκευές

18 Οκτ 2013 (πριν από 3 χρόνια και 9 μήνες)

97 εμφανίσεις

INTERFACIAL
MAGNETO
-
ELECTRIC SWITCHING
IN

MULTIFERROIC
HETEROSTRUCTURES


W Kleemann
1
,
P Borisov
2
,

X Chen
3
,

and C

Schmitz
-
Antoniak
1


1
Physi
cs

Department
, U
niversity Duisburg
-
Essen, 47048

Duisburg
,

Germany

email:
wolfgang.kleemann@uni
-
due.de
;

carolin.antoniak@uni
-
due.de

2
Department

of Chemistry
, University

of Liverpool
,
L69 7ZD
,
Liverpool, U.K.

e
mail:

P.Borisov@liverpool.ac.uk

3
Department of Physics,
South

China University

of Technology
, Guang
zhou

510640
,

China

e
mail:

xichen@scut.edu.cn



Switching of magnetism with electric fields and magnetic control of electric
polarization are challenging tasks of magnetoelectric materials, whose multiphase realizations
are most promising for applications.

We have inv
estigated classic 1
-
3 composites of ferrimagnetic cobalt ferrite nanopillars
embedded in a thick film of ferroelectric barium titanate using element sensitive
X
-
ray
absorption and SQUID magnetometry. In a transverse magnetic field a staggered rectangular
s
urface pola
ri
za
tion pattern forms in the barium titanate environment as probed by Ti
-
L
2,3
X
-
ray linear dichroism. It is due to shear stress trans
ferred from the strained mag
ne
to
strictive
cobalt ferrite nanopillars onto the interfacial piezoelectri
c barium titanate. The mechanism
and possible applications in data storage devices will be discussed.

For applications in micro
-

and nanoelectronic devi
ces the voltage control of magnetic
states is of utmost interest in order to defeat Joule heating. One
of the most promising
contemporary suggestions for non
-
volatile data storage is the electric field control of
exchange bias in magnetoelectric random access memory (MERAM) devices. Electric
switching of the magne
tization in an ultrathin cobalt/platinum/co
balt trilayer is enabled by the
exchange coupled sur
face magnetization of magnetoelectric chromite at the common
interface. Patented data storage and handling concepts will be presente
d.








Interfacial magneto
-
electric switching in multiferroic hete
rostructures

(ORAL PRESENTATION) [ID: 04/Dec/04/34/48/OP1524]

Interfaces & Grain Boundaries

Professor Wolfgang Kleemann

wolfgang.kleemann@uni
-
due.de

Physics Department, University Duisburg
-
Essen, 47048 Duisburg, Germany

Researcher

Dr Pavel Borisov

P.Bor
isov@liverpool.ac.uk

University United Kingdom

Department of Chemistry, University of Liverpool, L69 7ZD, Liverpool, U.K.

Researcher

Professor Xi Chen

xichen@scut.edu.cn

South China

Department of Physics, South China University of Technology, Guangzhou 510
640, China

Researcher

Dr Carolin Schmitz
-
Antoniak

carolin.antoniak@uni
-
due.de

Universität Germany

Physics Department, University Duisburg
-
Essen, 47048 Duisburg, Germany

Researcher

Switching of magnetism with electric fields and magnetic control of electri
c polarization are
challenging tasks of magnetoelectric materials, whose multiphase realizations are most
promising for applications. We have investigated classic 1
-
3 composites of ferrimagnetic
cobalt ferrite nanopillars embedded in a thick film of ferroe
lectric barium titanate using
element sensitive X
-
ray absorption and SQUID magnetometry. In a transverse magnetic field
a staggered rectangular surface polarization pattern forms in the barium titanate environment
as probed by Ti
-
L2,3 X
-
ray linear dichrois
m. It is due to shear stress transferred from the
strained magnetostrictive cobalt ferrite nanopillars onto the interfacial piezoelectric barium
titanate. The mechanism and possible applications in data storage devices will be discussed.
For applications i
n micro
-

and nanoelectronic devi¬ces the voltage control of magnetic states
is of utmost interest in order to defeat Joule heating. One of the most promising contemporary
suggestions for non
-
volatile data storage is the electric field control of exchange b
ias in
magnetoelectric random access memory (MERAM) devices. Electric switching of the
magnetization in an ultrathin cobalt/platinum/cobalt trilayer is enabled by the exchange
coupled surface magnetization of magnetoelectric chromite at the common interfac
e.
Patented
data storage and handling concepts will be presented.