These are numerical answers I obtained. I will grateful if you could inform me if you find errors in these answers.

greatgodlyΗλεκτρονική - Συσκευές

27 Νοε 2013 (πριν από 3 χρόνια και 4 μήνες)

83 εμφανίσεις

ELEC4200

Advanced VLSI Device Physics and Technology


These are numerical answers I obtained. I will grateful if you could inform me
if
you find
errors

in these answers
.


Tutorial 1

Q1

1.73x10
19

cm
-
3
, 2.57x10
19

cm
-
3
,

7.69x10
19

cm
-
3

Q
2

33.96 gm

Q
3

8.4 micr
ons


Tutorial 2

Q1

0.45

Q2

5.6 hours

Q3

After base drive
-
in:




After emitter drive
-
in:


Tutorial 3

Q1


x
j

= 35.9 microns


dN/dx at x
j

= 2.1x10
26

m
-
4

Q2

Emitter junction depth = 1.48 microns

Q3

The new junction depth = 2.49 microns


Sheet resistance of o
riginal drive
-
in =
1054 ohm per square


Sheet resistance of new drive
-
in = 1147 ohm per square

Q4

Surface dopant conc = 3x10
18
cm
-
3


Sheet resistance of remaining diffused layer = 3x10
5

ohm per square