EE 300 -THERMODYNAMICS

coralmonkeyΜηχανική

27 Οκτ 2013 (πριν από 3 χρόνια και 9 μήνες)

88 εμφανίσεις

EE 300
-

THERMODYNAMICS


Lecture
Schedule

Monday: 0930 to 1100,
1530 to
1700 hours

Tuesday: 0930 to 1100 hours

Wednesday: 0930 to 1100 hours

Thursday: 0930 to 1100 hours

Friday: 0800 to 0930 hours

Semester

Fall,

2009

Credit
Hours

3

Pre
-
requisite


Instruc
tor

KHALID ASGHAR

Contact

Khalid.asghar@umt.edu.pk

0333
-
4316181

Office

SST,
Central Block, 2nd Floor

Office Hours

Monday: 0800 to 0930 hours


1100 to 1300 hours

Tuesday: 0800 to 0930 hours


1100 to 1300 hours

Wednesday: 0800
to 0930 hours


1100 to 1300 hurs

Thursday: 0800 to 0930 hours


1100 to 1300 hours

Friday: 0930 to 1200 hours

Course
Description

Introduction and basic concepts in
Semiconductor electronics, pn junction, diode circui
ts

FETS, MOSFETS, BJT transistors

Expected
Outcomes

After studying of this course one is able to design single diode and multi
-

diode circuits,
all types of rectifiers,
wave shaping including function generators, Design of JFET,
MOSFET and BJT Circuits

Textbook


“Microelectronics circuit design” second international edition, by Richard C jaeger, Travis
N, Blalock

Reference
Book

Electronics devices and circuit theory by Robert L. Boylestad Louis Nashelsky

Ninth edition

Optical Communication by Gerd Kei
ser fourth edition

Solar Power manual.

Grading
Policy



Assignments and quizzes

20 %



Mid
-
Term Examination

30 %



Final Examination


50 %

Assignments
and quizzes

Problems will be assigned and quizzes will be given at regular intervals during the
semester.


M
id
-
Term
E
xaminati
on


This will cover all the material covered during the period between 1st lecture and 15
th

lecture.


Final

E
xaminati
on

This will cover all the material covered during the semester.

Attendance
Policy

Students missing more than 20% of the

lectures w
ill receive an “F” grade in the
course.



COURSE SCHEDULE



Week

Lecture
#

Topics

CH

Sections

1

1

2

.

Introduction to electronics. Brief history of
electronics. Classification of electronics signal.
Notational convention. Problem solving appr
oach.
Important concept from circuit theory, Frequency
spectrum of electronics signal. Amplifiers.

. Solid State Electronics Materials. Covalent bond
model. Drift current and mobility in semiconductors,
Mobility, Velocity Saturation. Resistivity of Intrins
ic
Silicon.





1

1

1
.1 to 1.9

2.1 to2.4

2

1

2

Impurities in Semiconductors.Electronics and holes
concentration in Doped Semiconductor, n
-
type
material , p
-
type material. Mobility and Resistivity in
doped semiconductor.Diffusion current and total
curren
t.


Energy band model, Electron


Hole Pair Generation
in an Intrinsic Semiconductor, Energy band model for
doped semiconductor, compensated semiconductors.
Overview of Integrated Circuit fabrication.


2

2

2.
5 to 2.11

3

1

2

The pn junction diode, p
-
n jun
ction electrostatics,
internal diode current. The i
-
v characteristics of the
diode. Mathematical model of the diode,



Diode characteristics under reverse , zero and forward
bias. Diode temperature coefficient. Diodes under
reverse bias. Saturation current

in real diodes, reverse
breakdown. Zener breakdown. Diode model for the
break down region.


3

3

3.1 to 3.6


4

1

2

.

P
-
N junction capacitance, reverse bias forward bias.
Schottky barrier diode. Diode circuit analysis, load
line analysis, analysis using
the mathematical model
for the diode, The ideal diode model, Constant
voltage drop model, Model comparison and
discussion.

Multiple diode circuits, A two diodes circuit, A three
diode circuit.

Analysis of diodes operating in the breakdown region,
load li
ne analysis, analysis with the piecewise linear
model, voltage regulations. Analysis including zener
resistance, Line and load regulations

3

3

3.7 to 3.12

5

1

2

.

Half wave rectifier circuits, half wave rectifier with
resistor load, rectifier filter capac
itor, Halfwave
rectifier with RC Load, Ripple voltage and conductor
3

3

3
.13 to 3.18


interval, diode current, surge current, peak inverse
voltage rating, diode power dissipation. Half wave
rectifier with negative output voltage.

Full wave rectifier circuit, Full wave brid
ge
rectification,

Rectifier comparison and design tradeoff. Three
terminal IC Voltage regulations, dc to dc convertors
the boost convertor, The buck convertor,


6

1

2

Wave shaping circuits, clipping and limiting circuits,
Dual clipping l
evel, Piecewise linear voltage transfer
characteristics, Dynamic switching behavior of the
diode, Photo diodes and photo detectors, power
generation from solar cell, Light emitting diodes.

Field effect Transistors, characteristics of the MOS
capacitor, ac
cumulation region, depletion region,
inversion region, The NMOS Transistors, qualitative
behavior of the NMOS Transistor, Triode region
characteristics of the NMOS Transistors. On
resistance, Use of MOSFET as a voltage controlled
resistor.


3

4

3.19 to 3.2
1

4.1 to 4.2 4

7

1

2

Saturation of the i
-
v characteristics, Mathematical
model in the saturation region, Transconductance,
channel length modulation, Transfer characteristics,
and depletion mode MOSFETS, Body effect of
substrate sensitivity.

PMOS Transist
ors, MOSFET Circuit symbols, MOS
Transistors Fabrication and Layout Design rules,
Minimum feature size and alignment Tolerance. MOS
Transistor Layout. Capacitance in MOS Transistors,
NMOS Transistor capacitance in the triode region,
capacitance in the satu
ration region, capacitances in
the cutoff region,


4

4

4
.2.5 to
4.6

8

1

2

Biasing the NMOS field effect Transistor.


Biasing the PMOS Field effect Transistors, Current
sources and the NMOS current mirror, dc analysis of
the NMOS Mirror ratio, Output resi
stance of the
current mirror, Current mirror Layout, multiple
current mirrors.



4

4

4
.7 to 4.10

9

1

2

MOS Transistor scaling, Drain current, Gate
capacitance, Circuit and Power densities, Power delay
product, Cutoff frequency, High field limitations, Sub
-
threshold conduction,

The junction field effect transistors, The JFET bias
applied, JFET channel with drain source bias, N
-
Channel JFET i
-
v characteristics, The p
-

channel
JFET, Circuit symbols of JFET Model, JFET
capacitance, Biasing the JFET and Deplet
ion


Mode
MOSFET


4

4


4.11 to 4.14

10

1

2

BJTs, Physical structure of the bipolar Transistor, The
Transport Model for the npn transistor, Forward
characteristics, Reverse characteristics, The complete
transport model equations for arbitrary bias conditi
on,
The pnp transistor

The Ebers


Moll Model, forward characteristics of
the npn transistors, reverse characteristics of the npn
transistors, The Ebers Moll Model for the npn
transistors, The Ebers Moll Model of pnp transistors,
The equivalent circuit r
epresentation for the Eber Moll
Model .


5

5


5.1 to 5.5

11

2

3

The Operating region of the bipolar transistors. The i
-
v characteristics of the bipolar transistors, Output
characteristics, Transfer characteristics, Junction
breakdown voltages, Junction br
eakdown voltages,
Minority carrier transport in the base region, Base
transit time, Diffusion capacitance

Transport Model simplifications, simplified model for
the cutoff region, Model simplification , model
simplification for the forward active region,

frequency
dependence of the common emitter current gain,
Transconductance, Simplified model for the reverse
active region, Modeling operation in the saturation
region,




5

5

5.6 to 5.9

12

1

2

The Early effect and early voltage, modeling of early
effect
, Origin of the early effect,

Practical Bias circuit for the BJT, Four resistor bias
network Design objectives for the four resistors bias
network,


5

5

5
.10

To 5.12

13

1

2

Current sources and bipolar current mirror, bipolar
transistor current mirror, cu
rrent mirror analysis,
Altering the BJT Current Mirror Ratio, Output
resistance of the current mirror.

Tolerance in the bias circuits, worst case analysis,
Monte Carlo analysis,



5

5

5.13 to 5.14


14

1

2

Practical Solar Cells

LED structures, Light sourc
e materials, Quantum
efficiency and LED power, Modulation of an LED,



Solar
power
manual

1
-
10

15

1

2

LASER DIODS, Laser diode modes and threshold
conditions, LASER DIODE rate equation, External
quantum efficiency, LASER DIODE Structure and
radiation patt
ern,

General discussion about the whole course, questions
and answers.


Ref 2


LASER
CHAPTER