1998 Session 1 1.1 GaAs Manufacturing: Myth and Reality Louis R. Tomasetta Vitesse Semiconductor Corporation 1.2 Next Generation of Automotive Radar Systems: System Performance and MMIC Requirements Josef Wenger Daimler-Benz Research Center 1.3 Teledisic: Global Broadband Wireless Communications for the 21

businessunknownInternet και Εφαρμογές Web

12 Νοε 2013 (πριν από 3 χρόνια και 9 μήνες)

189 εμφανίσεις

1998

Session 1

1.1

GaAs Manufacturing: Myth and Reality


Louis R. Tomasetta

Vitesse Semiconductor Corporation

1.2

Next Generation of Automotive Radar Systems:
System

Performance and MMIC Requirements


Josef Wenger

Daimler
-
Benz Research Center

1.3

Teledisic: Global Broadband Wireless
Communications

for the 21
st

Century


Jim Miller

Teledesic Corporation

1998

Session 2

2.1

Development of an Improved Capacitor Dielectric


Harland Cramer, James Oliver, Gil Dix, Michael Zimmerman

Northrop Grumman

2.2

Effects of PECVD Nitride Property on PHEMT Surface Passivation


Hengchang Chou, Mitchell Curiel, Katerina Hur, Larry Studebaker, David Kuhn, Bob Fisher, James Chang, Jerry
Want,
Forrest

Kellert

Hewlett
-
Packard Company, Arizona State University

2.3

El
ectrical Properties of thin RPECVD Si3N4 Films for Passivation and Capacitor Dielectric Layer


K.H. Kim, J.H. Lee, M.K. Sohn, J.S. Kim, H.Y. Cho, K.W. Chung, K.S. Seo

Seoul National University, LG Corporate Institute of Technology

2.4

Dry Etching of
Polyamide

Vias Using and Inductively Coupled Plasma source: Model and Experiment


S. Thomas III, C.H. fields, J.J. Brown, M. Sokolich, R. Martinez, B. Doty

HRL Research Laboratories

1998

Session 3

3.1

High Volume Production of AlGaAs/GaAs Heterojunction

Bipolar GTransistors


N. Pan, D. Hill, C. Rose, D. McCullough, P Rice, D.P. Vu

Kopin Corporation

3.2

Molecular Beam Epitaxy Grown Carbon
-
Doped Heterojunction Bipolar Transistors


K. Bacher, W.K. Liu, Y., Wu, M. Micovic, D. Lubyshev, E.L. Miller,
Y.Yun, J. Atherton, lJ. Chi, P. Ersland, M Fukuda,
A. Hansen, K. Lu, M. O’Keefe, P. Staecher, X. Zhang

Quantum Epitaxial Designs,
Inc.
, Penn State University, M/A
-
Com

3.3

Epitaxial GaAs Materials for Wireless Applications Grown by Large Diameter, Single W
afer MOVPE


M. Bruns, K. Chang, N. Cody, E. Johnson, M. Mikhov, J. Morzella, M. Rittgers

Motorola Semiconductor Products Sector

3.4

GaAs Substrate Manufacturing: The Foundation for High Volume Solutions


John D. Blevins, Wright Patterson AFB

1998

Sessi
on 4
-

High Volume Manufacturing


Special Session

1998

Session 5

5.1

High Speed Test of A
quadrature

Attenuator/Phase Shifter


Cecil Berry

Sanders A Lockheed Martin Company

5.2

Highly Flexible Microwave Test
-
Stand for volume Production MMIC Chip Sets


David Whitefield and John DelConte

Alpha Industri
es

5.3

Improving the Manufacturability of a production MESDET gate etch process


Sanjiv Kapoor

Watkins Johnson Company

5.4

On
-
Wafer thermal Resistance Measurement Technique for FET’s and HEMT’s


G.D.
Via, C. Bozada, G. DeSalvo, C. Cerny, R. Dettmer, J. Ebel, J. Gillespie, T. Jenkins, K. Nakano, C. Pettiford, T.
Quach, J. Sewell, R. Welch

Wright
-
Patterson AFB

5.5

On Wafer, Pulsed Internal
-
Node Waveform Verification of Improved Coplanar MMIC Power Ampli
fiers


J.W. Bao, C.J. Wei, J.C.M. Hwang

Lehigh University

1998

Session 6

6.1

10 Years Production Using the GaAs MESFET DIOM Process


Otto Berger

Siemens Semiconductor Group

6.2

Development of a robust Recess Etching Process for MESFET Devices


B.
Morley, P. Popoola

Watkins
-
Johnson company

6.3

MESFET Recess Geometry Impact on Idss


J. Malin, J. Beall, D. Zych, J. Bonkowski, S. Hillyard, N. Brette, K. Decker, T. Nagle

Triquint Semiconductor

6.4

A Double Selective Double Recess Process for Power PH
EMT Devices


W.F. Kopp, S.C. Wang, R. Isaak, P.C. Chao

Sanders, a Lockheed Martin Company

1998

Session 7

7.1

Power HBT’s for Digital Cellular Applications


Hidenori Shimawaki, Nobuyuki Hayama, Norio Goto, Kazuhiko Honjo

NEC Corporation

7.2

GaInP/GaAs
HBT Manufacture for 10 Gb/s Telecommunications Applications


Robert Surridge, Tim Lester

Nortel

7.3

Passivation Comparison for IngaP/GaAs Heterojunction Bipolar Transistors


J. Sewell, C. Bozada, G. DeSalvo, R. Dettmer, J. Gillespie, C. Cerny, J. Ebel,
T. Jenkins, K. Nakano, C. Pettiford, T.
Quach, R. Thompson, D. Via, R. Welch, R. Anholt

Wright
-
Patterson Air Force, Gateway Modeling, Epitronics Corp.

7.4

InGaP/GaAsHBTs with Ft and Fmax> 100 GHz


D.A. Ahmari, Q.J. Hartmann, P.D. Meyer, M.L. Hattendorf,
Q. Yang, J. Mu, M. Fend, G.E. Stillmand

University of Illinois

1998

Session 8

8.1

mm
-
Wave Ion Implanted Low Noise Process Transfer from the University of Illinois


David Danzilio

M/A
-
COM

8.2

Electronic Database for MMIC Design GTraceability


K.M.
Renaldo, J.W. Atkinson, S.F. Rutz, S.P. Spurgeon, H.G. Henry

Northrop Grumman, SYCOM

8.3

Heterojunction

Device simulation for Production PHEMT Process Control


Y.C. Pan, K. Tran, M.F. Zybura, B. Ireton

Litton Solid State Division,
Stanford

University

8.
4

6” GaAs Wafers Made of LEC Grown Crystals


Tilo Flade, Wolfram, Fliegel, Ralf Hammer, Manfred Jurisch, Azel Kiesel, Andre Kleinwechter, Andreas Kuhler,
Ulrich Kretzer, Berndt Weinert

Freiberger Compound Materials GmbH

8.5

Air
-
cavity Plastic Packages an
d New Sealing Methods using a Liquid Epoxy


Jong
-
Tae Ki, Ki
-
Sung Ham, Tae
-
Soo Kim, Chan
-
Ik Park, Jung
-
Rim Kee

CTI Semiconductor Corporation

8.6

A Cost
Effective

and Permanent Bias and Adjustment Technique for MMIC Circuits


Cecil Berry, Michael Blum,
Scott Powell

Sanders a Lockheed Martin Company

8.7

Large Volume and Highly Stable
Production

of MOVPE wafers


H. Otoki, H. Kamogawa, T. Meguro and M. Kashiwa

Hitaka Works, Hitachi Cable

1998

Session 9

9.1

Fluorine Passivation Effect in AlInAs/GaInAs
HEMT Material


N. Hayafuji, Y. Yamamoto, K. Sato

Mitsubishi Electric Corporation

9.2

Recoverable Drift in Output Power of PHEMT’s under RF Overdrive


Robert E. Heoni III, Jianwen Bao, Kiankang Bu, James C.M. Hwang

Lehigh University

9.3

Pseudomorphic
HEMT Reliability Analysis using Spectrally Resolved Carrier Recombination Imaging


Z.Y. Wang, M.W. Zhang, Li
-
Jen Cheng, G.P. Li, Y.C. Chou, R. Lai, Y.C. Chen, D. Leung, C.S. We, P.H. Liu, J. Scarpulla,
D.C. Streit

University of California, Irvine, Califor
nia Institute of Technology, TRW, Inc.

9.4

Transmission Line Pulse Measurements on InP Based HEMTs


K. van der Zanden, K. Bock

IMEC, MAP/CSE

9.5

Non
-
destructive and Efficient Measurement Technique for Monitoring of Beryllium Outdiffusion in AlGaAs/GaAs
HBTs by Photoluminescence (PL)


Hong Wang, Geok Ing Ng, Haiqun Zheng, Penghua Zhang

Nanyang Technological University

1998

Session 10

10.1

Transition

of 0.15 um T
-
Gates to Manufacturing


L.K. Hanes, B.E. Ostrowski, A.R. St. Germain, D. Shaw, K. Alavi

Ra
ytheon Company

10.2

E
-
Beam T
-
Gate Technology for Pseudomorphic HEMTs on 3” GaAs with Gate Length of 0.15um


T. Jakobus, W. Bronner, T. Fink, K.H. Glorer, J. Hornung, A. Hulsmann, K. Kohler, Z. Lao, B. Raynor, M.
Schlechtweg, A. Thiede, L. Verweyen

Franhofer
-
Institute

10.3

0.25 Micron Optical E
-
gate Development for GaAs Device Applications Using Chromeless Phase Shift Technology


Jerry Leonard

TriQuint Semiconductor, Inc.

10.4

Phase
-
shifter Edge Line Mask Technique for sub
-
quarter Micron Gate Ion
Implanted GaAs MESFET


Tamotsu Kimura, Tomoyuki Ohshima, Masanori Tsunotani

Oki Electric Industry Col, Ltd.

10.5

X
-
Ray Lithography Infrastructure Development for MMIC Manufacturing


N. Dandekar, J. Heaton

Sanders


A Lockheed Martin Company

1998

Session 11

11.1

A Low Cost 77 GHZ MMICs Process Using Direct Ion
-
Implanted GaAs MESFETs


H. Hsia, J. Middleton Z. Thang, R. Shimon, D. Coruth, D. Becker, J. Fendrich, M. Fend

University of Illinois at Urbana
-
Champaign

11.2

InGaP/GaAs HFETs:
Manufacturable High
-
Speed Devices


Q.J. Hartmann, A. Mahajan, D. Becher, H. Hsia, D.A. Ahmari, Q. Yang, I. Adesida, M. Feng, G.E. Stillman

University of Illinois

11.3

A Designed Experiment for the Optimization of PHEMT Layout and Profile


H.G. Henry, K.

M. Renaldo

Northrop Grumman

11.4

Physical Origins of MESFET Gate
-
Lag Characteristics


Jianwen Bao, Robert E. Leoni III, Xiaohang Du, Mikkhail S. Shirokov, James C.M. Hwang

Lehigh University

11.5

Minimizing Gate Lag in Planar GaAs MESFETs


D.A. Suda, J
.H. Bennett, M.C. Houng, B.A. Rioux, L. Bourbonnais

Nortel (Northern Telecom)

1998

Session 12

12.1

The Application of Silicon
-
Based Process Simulation Tools to the Fabrication of Heterojunction Bipolar Transistors


C.H. Fields, S. Thomas III

HRL
Laboratories, LLC

12.2

E
-
Beam Metal Evaporation: Photo Resist Critical Dimensions &
Substrate

Adhesion Dependence on Throw
Distance, Deposition Rate, Radiation, and Film Stress


David Kuhn, Karen Pruett, Alan Kashiwagi, JoAnn Peterson Kuni Yamamoto, Larr
y Studebaker, Scott Lafrancois,
Nancie Caldwell

Hewlett Packard

12.3

Low Resistance, Thermally Stable Ohmic Contact to n
-
GaAs for Low
-
Cost High
-
Density Interconnections


Yasushi Shiraishi, Tadash Maeda

NEC Corporation

12.4

The
Importance

of surface Chemistry of GaAs During Chemically
-
Amplified Resist Processing by X
-
ray Lithography


Bing Lu, Olga Vladimirsky, James W. Taylor, Niru Dandekar

Sanders, a Lockheed
Martin

Co.

12.5

Heterojunction Bipolar Transistor
Isolation

by Boron Implant


R. Dettmer, C. Bozada, C. Cerny, G. DeSalvo, J. Ebel, J. Gillespie, T. Jenkins, K. Nakano, C. Pettiford, T. Quach, J.
Sewell, D Via, R. Welch, R. Bhattacharya

Wright
-
Patterson
, AFB, Universal Energy Systems