H H I I N N D D R R E E C C T T I I F F I I E E R R S S L L T T D D

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1 Νοε 2013 (πριν από 3 χρόνια και 5 μήνες)

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Diode-Diode MODULE HDD25NXX



Symbol Characteristics Conditions
T
J
(
0
C)

Value Unit
BLOCKING PARAMETERS
V
RRM
Repetitive peak reverse voltage 150 200-1800 V
V
DRM
Repetitive peak off-stage voltage 150 200-1800 V
I
RRM
Repetitive peak reverse current
V = V
RRM
150 3 mA
CONDUCTING PARAMETERS
I
F(AV)
Average on-state current
180 sine, 50H
Z
, T
C

= 100
0
C

25 A
I
RMS
RMS on-state current 40 A
I
FSM
Surge on-state current 500 A
I
2
t

I
2
t

Sine wave, 10mS
without reverse
voltage
150
1250
A
2
S
V
T
Peak on-state voltage drop
On-state
current = 80A
150 1.40 V
V
0
Threshold voltage 25 0.85 V
R
0
On-state slope resistance 25 6.00 mΩ
THERMAL & MECHANICAL PARAMETERS
R
TH (J-C)
Thermal impedance, 180
conduction, Sine
J to C Per Arm
Per Module

1.00
0.50
0
C/W

R
TH (C-HK)
Thermal impedance
C to HK Per Arm
Per Module

0.20
0.10
0
C/W

T
J
Maximum Permissible junction
temperature
150
0
C

T
STG
Storage temperature range -40 – 150
0
C

V
ISOL

Insulation test voltage, RMS F = 50Hz, 1 min 2.5 kV
M1 Mounting Torque 4 NM
M2 Terminal connection Torque 4 NM
W Weight 90 gms

H
H
I
I
N
N
D
D


R
R
E
E
C
C
T
T
I
I
F
F
I
I
E
E
R
R
S
S


L
L
T
T
D
D


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Diode-Diode MODULE HDD25NXX





ALL DIMENSIONS IN MM






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N
N
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R
R
E
E
C
C
T
T
I
I
F
F
I
I
E
E
R
R
S
S


L
L
T
T
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Diode-Diode MODULE HDD25NXX





On State Power Loss
0
10
20
30
40
50
0 5 10 15 20 25 30 35 40 45 50
I
t(av)
- A
Pt(av)
- W
60
0
120
0
180
0
DC





Maximum Permissible Case Temp
0
20
40
60
80
100
120
140
160
180
0 5 10 15 20 25 30 35 40 45 50
I
t(av)
- A
Tcase (0C)
60
0
120
0
180
0
DC










H
H
I
I
N
N
D
D


R
R
E
E
C
C
T
T
I
I
F
F
I
I
E
E
R
R
S
S


L
L
T
T
D
D


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Diode-Diode MODULE HDD25NXX





Max non repetitive Surge Current
0
100
200
300
400
500
600
0.01 0.1 1 10
Time in Sec
Itsm
- A








Transient Thermal Impedance Junction to Case
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0.001 0.01 0.1 1 10
Time in Sec
Rth(j-c)










H
H
I
I
N
N
D
D


R
R
E
E
C
C
T
T
I
I
F
F
I
I
E
E
R
R
S
S


L
L
T
T
D
D


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Diode-Diode MODULE HDD25NXX




On State Characteristics
0
10
20
30
40
50
60
70
80
90
100
110
120
0 0.5 1 1.5 2 2.5
V
t
- V
I
t(av)
- A












































H
H
I
I
N
N
D
D


R
R
E
E
C
C
T
T
I
I
F
F
I
I
E
E
R
R
S
S


L
L
T
T
D
D


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Diode-Diode MODULE HDD25NXX



Ordering Information: -

HDD 25 N XX
Hirect make Diode-
Diode Module
I
F(AV)
= 25A Normal Thyristor V
RRM
= XX * 100
e.g.12 * 100 =1200V























Hind Rectifiers Ltd
reserves the right to change the specifications without
notice.

This datasheet specifies technical information for semiconductor devices but
promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.

Hind Rectifiers Ltd

Lake Road
Bhandup (West)
Mumbai – 400 078
Tel: - +91 22 2596 8027/28/29/31
Fax: - +91 22 2596 4114
E-mail: - marketing@hirect.com

Website: - www.hirect.com

June-2008


H
H
I
I
N
N
D
D


R
R
E
E
C
C
T
T
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I
F
F
I
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E
E
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R
S
S


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T
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