3A 2A 2B

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2 Νοε 2013 (πριν από 4 χρόνια και 7 μέρες)

77 εμφανίσεις


電機
3A

Sß;YNÓ


e¹9?
2A
e1 ^R-


e¹9?
2B

BI?f?O


Small size and minimal weight


Highly automated manufacturing processes


Lower possible operating voltages


No warm
-
up period


Lower power dissipation


Higher reliability and greater physical
ruggedness.


Extremely long life


Insensitivity to mechanical shock and
vibration




Silicon transistors typically do not operate
at voltages higher than about 1000

volts



High
-
power, high
-
frequency operation



when amplifying near the

saturation
point

typically fail and create distortion.



much more vulnerable than vacuum tubes




.基極
(Base)


o×e„83
(Collector)




83
(Emitter)

Mode

EBJ

CBJ

Cutoff

Reverse

Reverse

Active

Forward

Reverse

Saturation

Forward

Forward

For
npn
:

Active
: base higher than emitter, collector higher than base



Saturation
: base higher than emitter, but collector is not higher
than



base.

Cut
-
Off: base lower than emitter, but collector is higher than base. It


means
the transistor is not letting conventional current to go



through collector to emitter
.


MOSFET:

Metal
-
Oxide
-
Semiconductor Field
-
Effect Transistor


Two types MOS:


N
-
type MOS (NMOS), P
-
type MOS

(PMOS)


Four terminals:



Drain
(D), Gate (G), Source (S
), Body (B)


Circuit Symbol:

NMOS

P
MOS

n
-
type
semiconductor

p
-
type
semiconductor

V
GS
<
V
t

No channel is induced.

Transistor is cutoff.

No current flows.

V
GS
>
V
t

n
-
type channel is induced.

Transistor is on.

C
urrent
i
D

flows when V
DS

is applied.

SiO
2

u
ltraviolet light
-
sensitive
thin layer

m
ask

ultraviolet light
is projected

http://www.youtube.com/watch?v=dR
-
Qtv
-
7uWI&feature=related

washing with a
solvent

etching with hot gasses

washing with a
solvent

p
-
type substrate


MOSFET is voltage control, but BJT is current
control.


MOSFET


is a good analog switch, because it is symmetrical


lower
power
consumption


lower noise


high input resistance


size
is
smaller


BJT


high speed switching


better driving capability


g
ain is higher




Maleic

chitosan

nanofibres



Two
-
terminal devices



H +
-
FET



Electrical characterization



Atomic force microscopy



Simulations




pave the way for gadgets that can interface at
a molecular level with living systems



modulate the flow of protons or heavier ions
typically rely on water




be used for direct sensing of cells in the
laboratory



without electrolysis



reduces fabrication constraints









no
p
-
n

junctions to block current when the
device is off



hop from molecule to molecule

along ordered
chains of water




faster and more practical way to move
protons than using
microfluidics




published on Tuesday in
Nature Communications


Adel
S.Sedra

and Kenneth
C.Smith

“Microelectronic
Circuits” 6th Edition


http://
zh.wikipedia.org/wiki/MOSFET


http://
www.youtube.com/watch?v=dR
-
Qtv
-
7uWI&feature=related


http://
wiki.answers.com/Q/List_the_difference_betwe
en_BJT_and_FET_transistors


http://
www.youtube.com/watch?v=FBQkzK8C6
-
s


http://rocky.digikey.com/weblib/Panasonic/Web%20P
hotos/New%20Photos/New%20package%20type%20ph
otos/TO
-
126.jpg


http
://dmohankumar.files.wordpress.com/2011/08/
mosfet
-
2.jpg