Oral VCIAN-2010x - Institute of Photonics and Electronics

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2 Νοε 2013 (πριν από 3 χρόνια και 10 μήνες)

180 εμφανίσεις

Electrophoretic

Deposition

of
Metal
Nanoparticles


onto
InP

Semiconductor Wafers

K.

Zdansky
1,*
,
J.

Zavadil
1
, F.

Kostka
1
, R.

Yatskiv
1
,
J.

Grym
1
, O.

Cernohorsky
1,2
, M.

Kostejn
2
, K.

Piksova
2


Supported
by

Academy
of Sciences
CR, grant KAN401220801, by
Czech Science Foundation,
grant102/09/1037


and by COST Action MP0805, grant
OC10021 of

Ministry of Education CR

1
Institute
of Photonics and Electronics, Academy of Sciences CR,
Prague,
Czech Republic

2
Faculty
of Nuclear
Science
and
Physics
Engineering, Czech Technical
University in
Prague,
Czech Republic

*
e
-
mail
: zdansky@ufe.cz

Introduction


Layers of metal nanoparticles on semiconductors

Coupling: plasmon states
×

electron states
×

vibration states


photovoltage increase


photovoltaic cell, photodetector


photoluminescence increase


light source


surface enhanced Raman spectra (SERS)

Photothermal effects


material transform

Schottky barrier


quality improvement


Deposition by electrophoresis in nanotechnology

Colloid solution, non
-
polar solvent, surfactant

Charged reverse micelles

Optical absorption spectra of colloid solutions with Pd, Ag and
Au
nanoparticles


SEM of Pd
nanoparticles

on
InP

deposited

from a colloid solution prepared several
days
before

AFM of Pd
nanoparticles

EP
-
deposited in the
cathode

SEM of Pd
nanoparticles

on
InP

deposited

from a colloid solution prepared several
hours
before

SEM of Pd
nanoparticles

on
InP

after annealing

SEM of Pd
nanoparticles

on
InP

after annealing (in more detail)

Reflectance
spectrum
of
InP

with Pd
nanoparticles

Reflectance
spectrum
of
InP

with Pd
nanoparticles

after annealing

PL intensity of
InP

with excitation by He
-
Ne laser of (
i
)
InP

not
deposited (left) and (ii)
InP

deposited (right)

PL intensity of
InP

with excitation by He
-
Ne laser of (
i
)
InP

not
deposited (left) and (ii)
InP

deposited (right). Y=100

Raman spectra measured at 300 K with excitation by He
-
Ne laser:

(
i
)
InP
-
Pd (blue), (ii)
InP
-
Pd
-
ann

(red), (iii)
InP
-
blank (green)

Current
-
voltage
curves of
a diode
made on
InP

wafer with Pd
nanoparticles

Forming gas (10 % H
2
) affects the current of
the
reverse


biased
diode
made
on
InP

wafer with Pd
nanoparticles

Summary



Metal
nanoparticles

in surfactant enclosing dispersed in non
-
polar
isooctane carry charge


positive or negative.



Colloid solutions with spherical Pd, Ag, Au
nanoparticles

were
prepared.


Layers
of Pd
nanoparticles

were
EP
-
deposited.


SEM
and AFM show separated spherical
nanoparticals
.


Reflectance
spectra of
InP

with Pd
deposits show dips due to surface
plasmon

resonance of Pd
nanoparticles
.


Photoluminescence
is
quenched by Pd
nanoparticles.


Raman
spectrum is enhanced
and strong narrow peak appears.


Strong sensing of hydrogen in forming gas was
demonstrated on
Schottky

barriers
made on
InP

with Pd
nanoparticles
.